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SIHB12N60E-GE3

SIHB12N60E-GE3
Mfr. #:
SIHB12N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB12N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N60E-GE3 DatasheetSIHB12N60E-GE3 Datasheet (P4-P6)SIHB12N60E-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHB12N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
380 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
29 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
147 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
19 ns
Tipo de producto:
MOSFET
Hora de levantarse:
19 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
0.050717 oz
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**y
    E**y
    TR

    Tanks

    2019-01-22
    A***v
    A***v
    RU

    Everything has come safe and sound

    2019-01-22
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK
***ure Electronics
MOSFET 600V 380MOHM@10V 12A N-CH E-SRS
***ment14 APAC
MOSFET, N CH, 600V, 12A, TO-263-3
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB12N60E-GE3
DISTI # V36:1790_09219014		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9136
  • 500000:$0.9150
  • 100000:$0.9941
  • 10000:$1.1110
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # V99:2348_09219014		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9821
  • 500000:$0.9833
  • 100000:$1.0390
  • 10000:$1.1180
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk		146In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8590
  • 6000:$0.8827
  • 4000:$0.9079
  • 2000:$0.9463
  • 1000:$0.9753
SIHB12N60E-GE3
DISTI # 68W7031		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7031)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.1800
SIHB12N60E-GE3
DISTI # 68W7031		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 12A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant		322
  • 100:$1.0300
  • 250:$1.0300
  • 500:$1.0300
  • 25:$1.1200
  • 50:$1.1200
  • 1:$1.2200
  • 10:$1.2200
SIHB12N60E-GE3
DISTI # 68W7032		Vishay IntertechnologiesMOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant		0
  • 10000:$0.8380
  • 6000:$0.8710
  • 4000:$0.9050
  • 2000:$1.0100
  • 1000:$1.0600
  • 1:$1.1300
SIHB12N60E-GE3
DISTI # 78-SIHB12N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		840
  • 1:$1.9800
  • 10:$1.7400
  • 100:$1.3700
  • 500:$1.1700
  • 1000:$0.9710
  • 2000:$0.9040
  • 5000:$0.8910
SIHB12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    SIHB12N60E-GE3
    DISTI # 1451818    		Vishay IntertechnologiesIn a Tube of 50, SIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, TU
    Min Qty: 50
    Container: Tube    		0
    • 50:$0.6980
    SIHB12N60E-GE3
    DISTI # 7689300    		Vishay IntertechnologiesSIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, EA
    Min Qty: 1
    Container: Bulk    		671
    • 1:$0.7150
    SIHB12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		Europe - 900
      SIHB12N60E-GE3
      DISTI # 2364071      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant      		1165
      • 5000:£0.7190
      • 1000:£0.7450
      • 500:£0.9630
      • 250:£1.0300
      • 100:£1.1000
      • 10:£1.4300
      • 1:£1.9500
      SIHB12N60E-GE3
      DISTI # 2364071      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant      		1160
      • 5000:$1.3700
      • 2500:$1.4300
      • 1000:$1.5300
      • 500:$1.8500
      • 100:$2.2500
      • 10:$2.7900
      • 1:$3.1100
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      Disponibilidad
      Valores:
      500
      En orden:
      2483
      Ingrese la cantidad:
      El precio actual de SIHB12N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,08 US$
      2,08 US$
      10
      1,72 US$
      17,20 US$
      100
      1,34 US$
      134,00 US$
      500
      1,17 US$
      585,00 US$
      1000
      0,97 US$
      971,00 US$
      2000
      0,90 US$
      1 808,00 US$
      5000
      0,87 US$
      4 355,00 US$
      10000
      0,84 US$
      8 370,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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