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CSD87312Q3E

CSD87312Q3E
Mfr. #:
CSD87312Q3E
Descripción:
MOSFET 2N-CH 30V 27A 8VSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD87312Q3E Ficha de datos
Entrega:
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ECAD Model:
Más información:
CSD87312Q3E más información CSD87312Q3E Product Details
Atributo del producto
Valor de atributo
Fabricante
Instrumentos Texas
categoria de producto
FET: matrices
Serie
NexFET
embalaje
Embalaje alternativo de Digi-ReelR
Estilo de montaje
SMD / SMT
Nombre comercial
NexFET
Paquete-Estuche
8-PowerTDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-VSON (5x6)
Configuración
Fuente común dual
Tipo FET
2 N-Channel (Dual) Common Source
Potencia máxima
2.5W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
1250pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
27A
Rds-On-Max-Id-Vgs
33 mOhm @ 7A , 8V
Vgs-th-Max-Id
1.3V @ 250μA
Puerta-Carga-Qg-Vgs
8.2nC @ 4.5V
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
2.8 ns
Hora de levantarse
16 ns
Vgs-Puerta-Fuente-Voltaje
10 V
Id-corriente-de-drenaje-continua
27 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V
Resistencia a la fuente de desagüe de Rds
38 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
17 ns
Tiempo de retardo de encendido típico
7.8 ns
Qg-Gate-Charge
6.3 nC
Transconductancia directa-Mín.
39 S
Tags
CSD8731, CSD873, CSD87, CSD8, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
30V, N ch NexFET MOSFET™, dual common source SON3x3, 38mOhm 8-VSON-CLIP -55 to 150
***p One Stop Global
Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R
***Components
MOSFET Dual N-Ch 30V 27A NexFET VSON8EP
***ark
30V Powerblock N ch MOSFET
***i-Key
MOSFET 2N-CH 30V 27A 8VSON
***ical
High Frequency Synchronous Power Module
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descripción Valores Precio
CSD87312Q3E
DISTI # 296-35526-1-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2270In Stock
  • 1000:$0.5234
  • 500:$0.6630
  • 100:$0.8550
  • 10:$1.0820
  • 1:$1.2200
CSD87312Q3E
DISTI # 296-35526-6-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2270In Stock
  • 1000:$0.5234
  • 500:$0.6630
  • 100:$0.8550
  • 10:$1.0820
  • 1:$1.2200
CSD87312Q3E
DISTI # 296-35526-2-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4506
  • 2500:$0.4743
CSD87312Q3E
DISTI # CSD87312Q3E		Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R (Alt: CSD87312Q3E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    CSD87312Q3E
    DISTI # CSD87312Q3E    		Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R - Tape and Reel (Alt: CSD87312Q3E)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.4469
    • 5000:$0.4249
    • 10000:$0.4109
    • 15000:$0.3969
    • 25000:$0.3859
    CSD87312Q3EDual 30-V N-Channel NexFET Power MOSFETs7050
    • 1000:$0.3500
    • 750:$0.3900
    • 500:$0.4900
    • 250:$0.6000
    • 100:$0.6500
    • 25:$0.7600
    • 10:$0.8200
    • 1:$0.9200
    CSD87312Q3E
    DISTI # 595-CSD87312Q3E    		MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
    RoHS: Compliant    		737
    • 1:$1.0100
    • 10:$0.8600
    • 100:$0.6630
    • 500:$0.5860
    • 1000:$0.4620
    • 2500:$0.4100
    CSD87312Q3EPower Field-Effect Transistor, 27A I(D), 30V, 0.038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		7560
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5000
    Imagen Parte # Descripción
    CSD87502Q2

    Mfr.#: CSD87502Q2

    OMO.#: OMO-CSD87502Q2

    		 MOSFET 30V, N ch NexFET MOSFETG , dual SON2x2, 42mOhm 6-WSON -55 to 150
    CSD87381PT

    Mfr.#: CSD87381PT

    OMO.#: OMO-CSD87381PT

    		 MOSFET Sync Buck NexFET Pwr Block II
    CSD87381PEVM-603

    Mfr.#: CSD87381PEVM-603

    OMO.#: OMO-CSD87381PEVM-603

    		 Power Management IC Development Tools CSD87381P EVAL MOD
    CSD87353Q5D-1

    Mfr.#: CSD87353Q5D-1

    OMO.#: OMO-CSD87353Q5D-1-TEXAS-INSTRUMENTS

    		 Nuevo y original
    CSD87353Q5D.

    Mfr.#: CSD87353Q5D.

    OMO.#: OMO-CSD87353Q5D--TEXAS-INSTRUMENTS

    		 Nuevo y original
    CSD87313DMST

    Mfr.#: CSD87313DMST

    OMO.#: OMO-CSD87313DMST-TEXAS-INSTRUMENTS

    		 MOSFET 2 N-CHANNEL 30V 8WSON
    CSD87503Q3ET

    Mfr.#: CSD87503Q3ET

    OMO.#: OMO-CSD87503Q3ET-TEXAS-INSTRUMENTS

    		 30-V DUAL N-CHANNEL MOSFET, COMM
    CSD87312Q3E

    Mfr.#: CSD87312Q3E

    OMO.#: OMO-CSD87312Q3E-TEXAS-INSTRUMENTS

    		 MOSFET 2N-CH 30V 27A 8VSON
    CSD87335Q3D

    Mfr.#: CSD87335Q3D

    OMO.#: OMO-CSD87335Q3D-TEXAS-INSTRUMENTS

    		 MOSFET N-CH 30V POWERBLOCK
    CSD87381PEVM-603

    Mfr.#: CSD87381PEVM-603

    OMO.#: OMO-CSD87381PEVM-603-TEXAS-INSTRUMENTS

    		 CSD87381 EVALUATION BOARD
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de CSD87312Q3E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,52 US$
    0,52 US$
    10
    0,50 US$
    4,99 US$
    100
    0,47 US$
    47,25 US$
    500
    0,45 US$
    223,15 US$
    1000
    0,42 US$
    420,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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