NGTB35N60FL2WG

NGTB35N60FL2WG
Mfr. #:
NGTB35N60FL2WG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 600V/35A FAST IGBT FSII T
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTB35N60FL2WG Ficha de datos
Entrega:
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HTML Datasheet:
NGTB35N60FL2WG DatasheetNGTB35N60FL2WG Datasheet (P4-P6)NGTB35N60FL2WG Datasheet (P7-P8)
ECAD Model:
Más información:
NGTB35N60FL2WG más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.2 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
70 A
Pd - Disipación de energía:
300 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
70 A
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
NGTB35, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
***ied Electronics & Automation
NGTB35N60FL2WG; IGBT Transistor; 70 A 600 V; 1MHz; 3-Pin TO-247
***nell
600V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
Parte # Mfg. Descripción Valores Precio
NGTB35N60FL2WG
DISTI # V99:2348_07286008
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
28
  • 500:$2.4110
  • 250:$2.6690
  • 100:$2.8160
  • 10:$3.1950
  • 1:$4.0403
NGTB35N60FL2WG
DISTI # NGTB35N60FL2WGOS-ND
ON SemiconductorIGBT 600V 70A 300W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 2520:$2.2147
  • 510:$2.7572
  • 120:$3.2389
  • 30:$3.7373
  • 10:$3.9530
  • 1:$4.4000
NGTB35N60FL2WG
DISTI # 25862784
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
28
  • 500:$2.5918
  • 250:$2.8692
  • 100:$3.0272
  • 10:$3.4346
  • 3:$3.9485
NGTB35N60FL2WG
DISTI # NGTB35N60FL2WG
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N60FL2WG)
RoHS: Compliant
Min Qty: 30
Container: Tube
Americas - 10
  • 300:$1.9530
  • 150:$2.0024
  • 90:$2.0281
  • 60:$2.0544
  • 30:$2.0678
NGTB35N60FL2WG
DISTI # NGTB35N60FL2WG
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube (Alt: NGTB35N60FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€1.7900
  • 100:€1.9900
  • 500:€1.9900
  • 50:€2.0900
  • 25:€2.1900
  • 10:€2.2900
  • 1:€2.4900
NGTB35N60FL2WG
DISTI # NGTB35N60FL2WG
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N60FL2WG)
Min Qty: 143
Container: Bulk
Americas - 0
  • 1430:$2.0900
  • 286:$2.1900
  • 429:$2.1900
  • 715:$2.1900
  • 143:$2.2900
NGTB35N60FL2WG.
DISTI # 29AC8927
ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes0
  • 300:$1.9800
  • 150:$2.0400
  • 62:$2.0600
  • 32:$2.0900
  • 1:$2.1000
NGTB35N60FL2WG
DISTI # 70600202
ON SemiconductorNGTB35N60FL2WG,IGBT Transistor,70 A 600 V,1MHz,3-Pin TO-247
RoHS: Compliant
0
  • 2:$2.9900
  • 10:$2.8400
  • 20:$2.7000
  • 50:$2.5600
  • 100:$2.4300
NGTB35N60FL2WG
DISTI # 863-NGTB35N60FL2WG
ON SemiconductorIGBT Transistors 600V/35A FAST IGBT FSII T
RoHS: Compliant
28
  • 1:$4.1800
  • 10:$3.5500
  • 100:$3.0800
  • 250:$2.9200
  • 500:$2.6200
NGTB35N60FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant
3510
  • 1000:$2.3200
  • 500:$2.4400
  • 100:$2.5400
  • 25:$2.6500
  • 1:$2.8500
NGTB35N60FL2WG
DISTI # 8427894P
ON SemiconductorIGBT FIELD STOP II 600V 35A DIODE TO247, TU32
  • 100:£1.6350
  • 50:£1.8100
  • 20:£1.8500
  • 10:£1.8900
NGTB35N60FL2WG
DISTI # 2452036
ON Semiconductor600V/35A FAST IGBT FSII T
RoHS: Compliant
0
  • 500:$4.0300
  • 250:$4.4900
  • 100:$4.7400
  • 10:$5.4600
  • 1:$6.4300
NGTB35N60FL2WG
DISTI # 2452036
ON Semiconductor600V/35A FAST IGBT FSII T
RoHS: Compliant
0
  • 500:£2.0100
  • 250:£2.2400
  • 100:£2.3600
  • 10:£2.7200
  • 1:£3.5800
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Mfr.#: DZT5551-13

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Mfr.#: C3M0280090J

OMO.#: OMO-C3M0280090J

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C3M0065090J

Mfr.#: C3M0065090J

OMO.#: OMO-C3M0065090J

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Mfr.#: TPS7A7001DDA

OMO.#: OMO-TPS7A7001DDA

LDO Voltage Regulators 2A,Sgl Out,Very Lo Inp,Adj LDO Lin Reg
C3M0120090J

Mfr.#: C3M0120090J

OMO.#: OMO-C3M0120090J

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C3M0120090D

Mfr.#: C3M0120090D

OMO.#: OMO-C3M0120090D

MOSFET G3 SiC MOSFET 900V, 120mOhm
FRDM-KL25Z

Mfr.#: FRDM-KL25Z

OMO.#: OMO-FRDM-KL25Z-NXP-SEMICONDUCTORS

FREEDOM KL1X/KL2X DEV EVAL BRD
C3M0120090D

Mfr.#: C3M0120090D

OMO.#: OMO-C3M0120090D-WOLFSPEED

900V, 120 MOHM, G3 SIC MOSFET
C3M0120090J

Mfr.#: C3M0120090J

OMO.#: OMO-C3M0120090J-WOLFSPEED

MOSFET N-CH 900V 22A
Disponibilidad
Valores:
598
En orden:
2581
Ingrese la cantidad:
El precio actual de NGTB35N60FL2WG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,18 US$
4,18 US$
10
3,55 US$
35,50 US$
100
3,08 US$
308,00 US$
250
2,92 US$
730,00 US$
500
2,62 US$
1 310,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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