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SIHD1K4N60E-GE3

SIHD1K4N60E-GE3
Mfr. #:
SIHD1K4N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD1K4N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHD1K4N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
4.2 A
Rds On - Resistencia de la fuente de drenaje:
1.45 Ohms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
7.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
63 W
Configuración:
Único
Modo de canal:
Mejora
Serie:
E
Tipo de transistor:
1 N-Channel E-Series Power MOSFET
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
0.8 S
Otoño:
22 ns
Tipo de producto:
MOSFET
Hora de levantarse:
23 ns
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
10 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
SIHD1, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHD1K4N60E-GE3
DISTI # V99:2348_22712079		Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 1450 m @ 10V3000
  • 2500:$0.4537
  • 1000:$0.4579
  • 500:$0.5853
  • 100:$0.6969
  • 10:$1.0531
  • 1:$1.2277
SIHD1K4N60E-GE3
DISTI # SIHD1K4N60E-GE3-ND		Vishay SiliconixMOSFET N-CH DPAK TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk		3015In Stock
  • 5000:$0.4678
  • 2500:$0.4924
  • 1000:$0.5276
  • 500:$0.6683
  • 100:$0.8090
  • 10:$1.0380
  • 1:$1.1600
SIHD1K4N60E-GE3
DISTI # 33076649		Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 1450 m @ 10V3000
  • 2500:$0.4537
  • 1000:$0.4579
  • 500:$0.5853
  • 100:$0.6969
  • 14:$1.0531
SIHD1K4N60E-GE3
DISTI # SIHD1K4N60E-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHD1K4N60E-GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.4289
  • 12000:$0.4409
  • 8000:$0.4529
  • 4000:$0.4729
  • 2000:$0.4869
SIHD1K4N60E-GE3
DISTI # 99AC9554		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes45
  • 500:$0.6430
  • 250:$0.6960
  • 100:$0.7480
  • 50:$0.8240
  • 25:$0.8990
  • 10:$0.9750
  • 1:$1.1800
SIHD1K4N60E-GE3
DISTI # 78-SIHD1K4N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3000
  • 1:$1.1700
  • 10:$0.9650
  • 100:$0.7410
  • 500:$0.6370
  • 1000:$0.5030
  • 2500:$0.4690
  • 5000:$0.4460
  • 10000:$0.4290
SIHD1K4N60E-GE3
DISTI # 3019080		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-25245
  • 500:£0.4620
  • 250:£0.5000
  • 100:£0.5370
  • 10:£0.7530
  • 1:£0.9690
SIHD1K4N60E-GE3
DISTI # 3019080		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-252
RoHS: Compliant		45
  • 1000:$0.5930
  • 500:$0.7490
  • 250:$0.8380
  • 100:$0.9230
  • 25:$1.2500
  • 5:$1.3700
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 8-bit Microcontrollers - MCU 128KB Flash, 8KB RAM, 1KB EEPROM, 12-bit ADC2, Vector Interrupts, DMA, MAP, DIA, DAC, Comp, PWM, CWG, HLT, WWDT, SCAN/CRC, ZCD, PPS, UART, SPI/I2C, IDLE/DOZE/PMD
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PIC18F27K42-E/ML

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OMO.#: OMO-PIC18F27K42-E-ML-MICROCHIP-TECHNOLOGY

 128KB Flash, 8KB RAM, 1KB EEPROM, 12-bit ADC2, Vector Interrupts, DMA, MAP, DIA, DAC, Comp, PWM, CWG
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de SIHD1K4N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,17 US$
1,17 US$
10
0,97 US$
9,65 US$
100
0,74 US$
74,10 US$
500
0,64 US$
318,50 US$
1000
0,50 US$
503,00 US$
2500
0,47 US$
1 172,50 US$
5000
0,45 US$
2 230,00 US$
10000
0,43 US$
4 290,00 US$
25000
0,42 US$
10 400,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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