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IGW08T120

IGW08T120
Mfr. #:
IGW08T120
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors LOW LOSS IGBT TECH 1200V 8A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW08T120 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.7 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
16 A
Pd - Disipación de energía:
70 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
TRENCHSTOP IGBT
Embalaje:
Tubo
Altura:
20.9 mm
Longitud:
15.9 mm
Ancho:
5.03 mm
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGW08T120FKSA1 IGW8T12XK SP000013937
Unidad de peso:
1.340411 oz
Tags
IGW08, IGW0, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247
***ark
Igbt, Single, 1.2Kv, 16A, To-247; Dc Collector Current:16A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:70W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon SCT
The 1200 V, 8 A single TRENCHSTOP™ IGBT3 in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 16 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.2 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***p One Stop
Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247
***ment14 APAC
IGBT, N, 1200V, 8A, TO-247; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:8A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:70W; Power Dissipation Pd:70W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon SCT
The 1200 V, 8 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ical
Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247
***i-Key
IGBT, 16.5A, 1200V, N-CHANNEL
*** Electronic Components
IGBT 1200V 16.5A 125W TO247
***el Nordic
Contact for details
***ment14 APAC
IGBT, NPT, 1200V, 16.5A, 125W, TO247; Transistor Type:IGBT; DC Collector Current:16.5A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulsed Current Icm:27A; Rise Time:31ns
***ical
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
***Parts
IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole
***ure Electronics
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
***nell
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
***ark
Igbt Single Transistor, 30 A, 2.1 V, 278 W, 1.2 Kv, To-247, 3
***ical
Trans IGBT Chip N-CH 1200V 30A 278000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 278W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W
***rchild Semiconductor
HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ource
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode43A, 1200V,,NPTN£¨
*** Source Electronics
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
***ure Electronics
HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***rchild Semiconductor
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Parte # Mfg. Descripción Valores Precio
IGW08T120FKSA1
DISTI # V36:1790_06377779		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IGW08T120FKSA1
    DISTI # IGW08T120FKSA1-ND    		Infineon Technologies AGIGBT 1200V 16A 70W TO247-3
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Temporarily Out of Stock
    • 240:$2.4312
    IGW08T120
    DISTI # SP000013937    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin TO-247 Tube (Alt: SP000013937)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Europe - 720
    • 30:€1.4899
    • 60:€1.2419
    • 120:€1.1459
    • 180:€1.0639
    • 300:€0.9929
    IGW08T120
    DISTI # IGW08T120    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin TO-247 Tube - Bulk (Alt: IGW08T120)
    RoHS: Compliant
    Min Qty: 302
    Container: Bulk    		Americas - 0
    • 302:$1.7900
    • 304:$1.6900
    • 606:$1.6900
    • 1510:$1.5900
    • 3020:$1.5900
    IGW08T120
    DISTI # SP000013937    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin TO-247 Tube (Alt: SP000013937)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€1.8900
    • 10:€1.3900
    • 25:€1.1900
    • 50:€1.0900
    • 100:€1.0900
    • 500:€1.0900
    • 1000:€1.0900
    IGW08T120XK
    DISTI # IGW08T120FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW08T120FKSA1)
    RoHS: Compliant
    Min Qty: 480
    Container: Tube    		Americas - 0
    • 480:$1.2900
    • 960:$1.1900
    • 1440:$1.1900
    • 2400:$1.0900
    • 4800:$1.0900
    IGW08T120FKSA1
    DISTI # 33AC5072    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 16A, TO-247,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:70W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes77
    • 500:$1.3500
    • 250:$1.4000
    • 100:$1.6600
    • 50:$1.9200
    • 25:$2.0500
    • 10:$2.3400
    • 1:$2.7000
    IGW08T120
    DISTI # 726-IGW08T120    		Infineon Technologies AGIGBT Transistors LOW LOSS IGBT TECH 1200V 8A
    RoHS: Compliant    		96
    • 1:$3.1400
    • 10:$2.6700
    • 100:$2.3100
    • 250:$2.1900
    • 500:$1.9700
    IGW08T120Infineon Technologies AGInsulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
    RoHS: Compliant    		2662
    • 1000:$1.0800
    • 500:$1.1400
    • 100:$1.1800
    • 25:$1.2300
    • 1:$1.3300
    IGW08T120FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
    RoHS: Compliant    		1920
    • 1000:$1.0800
    • 500:$1.1400
    • 100:$1.1800
    • 25:$1.2300
    • 1:$1.3300
    IGW08T120
    DISTI # IGW08T120    		Infineon Technologies AGTransistor: IGBT,1200V,8A,70W,TO247-3393
    • 1:$2.2100
    • 5:$1.8700
    • 30:$1.5400
    • 120:$1.4200
    IGW08T120FKSA1
    DISTI # XSKDRABS0006362    		Infineon Technologies AG 
    RoHS: Compliant    		570 in Stock0 on Order
    • 570:$1.6560
    • 480:$1.7760
    IGW08T120FKSA1
    DISTI # 2781344    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 16A, TO-247
    RoHS: Compliant    		127
    • 100:£2.2100
    • 10:£2.2500
    • 1:£2.3000
    IGW08T120FKSA1
    DISTI # 2781344    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 16A, TO-247
    RoHS: Compliant    		77
    • 100:$2.8000
    • 10:$3.1600
    • 1:$3.3800
    Imagen Parte # Descripción
    2N7002

    Mfr.#: 2N7002

    OMO.#: OMO-2N7002

    		 MOSFET N-CHANNEL 60V 115mA
    TMS320F28374SPTPS

    Mfr.#: TMS320F28374SPTPS

    OMO.#: OMO-TMS320F28374SPTPS

    		 32-bit Microcontrollers - MCU DelfinoG 32-bit MCU with 400 MIPS, 1xCPU, 1xCLA, FPU, TMU, 512 KB Flash, EMIF, 12b ADC 176-HLQFP -40 to 125
    7466303R

    Mfr.#: 7466303R

    OMO.#: OMO-7466303R

    		 Terminals WP-SMRA SMD Block 7mm
    TMS320F28374SPTPS

    Mfr.#: TMS320F28374SPTPS

    OMO.#: OMO-TMS320F28374SPTPS-TEXAS-INSTRUMENTS

    		 Microcontrollers - MCU 32-bit Microcontrollers - MCU Single-Core Delfino Microcontroller 176-HLQFP -40 to 125
    2N7002

    Mfr.#: 2N7002

    OMO.#: OMO-2N7002-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 115MA SOT-23
    FTSH-105-01-L-DV-K

    Mfr.#: FTSH-105-01-L-DV-K

    OMO.#: OMO-FTSH-105-01-L-DV-K-SAMTEC

    		 Conn Unshrouded Header HDR 10 POS 1.27mm Solder ST SMD Tube
    B59412C1130B070

    Mfr.#: B59412C1130B070

    OMO.#: OMO-B59412C1130B070-EPCOS

    		 PTC Thermistors 440volts 120ohms ICL AEC-Q200
    7466303R

    Mfr.#: 7466303R

    OMO.#: OMO-7466303R-WURTH-ELECTRONICS

    		 SMD BLOCKM 3 X 7 MM
    Disponibilidad
    Valores:
    93
    En orden:
    2076
    Ingrese la cantidad:
    El precio actual de IGW08T120 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,14 US$
    3,14 US$
    10
    2,67 US$
    26,70 US$
    100
    2,31 US$
    231,00 US$
    250
    2,19 US$
    547,50 US$
    500
    1,97 US$
    985,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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