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BSB056N10NN3 G

BSB056N10NN3 G
Mfr. #:
BSB056N10NN3 G
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH 100V 9A 7-Pin WDSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSB056N10NN3 G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
BSB056N10NN3GXT BSB056N10NN3GXUMA1 SP000604540
Nombre comercial
OptiMOS
Paquete-Estuche
WDSON-2
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Id-corriente-de-drenaje-continua
83 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
5.6 mOhms
Polaridad del transistor
Canal N
Tags
BSB056, BSB05, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSB056N10NN3 G
DISTI # C1S322000455023		Infineon Technologies AGTrans MOSFET N-CH 100V 9A 7-Pin WDSON
RoHS: Compliant		12
  • 50:$1.1200
BSB056N10NN3GXUMA1
DISTI # BSB056N10NN3GXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 9A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		24055In Stock
  • 1000:$1.7588
  • 500:$2.0854
  • 100:$2.5753
  • 10:$3.1410
  • 1:$3.5200
BSB056N10NN3GXUMA1
DISTI # BSB056N10NN3GXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 9A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		24055In Stock
  • 1000:$1.7588
  • 500:$2.0854
  • 100:$2.5753
  • 10:$3.1410
  • 1:$3.5200
BSB056N10NN3GXUMA1
DISTI # BSB056N10NN3GXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 9A WDSON-2
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$1.5612
BSB056N10NN3G
DISTI # SP000604540		Infineon Technologies AGTrans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€2.2900
  • 10000:€1.7900
  • 20000:€1.4900
  • 30000:€1.3900
  • 50000:€1.2900
BSB056N10NN3GXUMA1
DISTI # BSB056N10NN3GXUMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R - Tape and Reel (Alt: BSB056N10NN3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.4900
  • 5002:$1.4900
  • 10002:$1.3900
  • 25000:$1.3900
  • 50000:$1.3900
BSB056N10NN3GXUMA1
DISTI # SP000604540		Infineon Technologies AGTrans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€1.7900
  • 10000:€1.4900
  • 20000:€1.2900
  • 30000:€1.1900
  • 50000:€1.1900
BSB056N10NN3GXUMA1
DISTI # 47Y7989		Infineon Technologies AGMOSFET Transistor, N Channel, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
    BSB056N10NN3 G
    DISTI # 726-BSB056N10NN3G    		Infineon Technologies AGMOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3
    RoHS: Compliant    		8622
    • 1:$2.9400
    • 10:$2.5000
    • 100:$2.1700
    • 250:$2.0600
    • 500:$1.8500
    • 1000:$1.5600
    • 2500:$1.4800
    • 5000:$1.4200
    BSB056N10NN3 G E8182
    DISTI # N/A    		Infineon Technologies AGMOSFET0
      BSB056N10NN3GInfineon Technologies AGPower Field-Effect Transistor, 9A I(D), 100V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		4793
      • 1000:$1.5000
      • 500:$1.5800
      • 100:$1.6400
      • 25:$1.7100
      • 1:$1.8500
      BSB056N10NN3GXUMA1
      DISTI # 9064393P      		Infineon Technologies AGMOSFET N-CHANNEL 100V 9A OPTIMOS WDSON, RL5
      • 50:£1.7240
      • 100:£1.4900
      Imagen Parte # Descripción
      BSB056N10NN3 G

      Mfr.#: BSB056N10NN3 G

      OMO.#: OMO-BSB056N10NN3-G

      		 MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3
      BSB056N10NN3GXUMA1

      Mfr.#: BSB056N10NN3GXUMA1

      OMO.#: OMO-BSB056N10NN3GXUMA1

      		 MOSFET MV POWER MOS
      BSB056N10NN3 G

      Mfr.#: BSB056N10NN3 G

      OMO.#: OMO-BSB056N10NN3-G-1190

      		 Trans MOSFET N-CH 100V 9A 7-Pin WDSON
      BSB056N10NN3G

      Mfr.#: BSB056N10NN3G

      OMO.#: OMO-BSB056N10NN3G-1190

      		 Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540)
      BSB056N10NN3GXUMA1

      Mfr.#: BSB056N10NN3GXUMA1

      OMO.#: OMO-BSB056N10NN3GXUMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 9A WDSON-2
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de BSB056N10NN3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,68 US$
      1,68 US$
      10
      1,60 US$
      15,96 US$
      100
      1,51 US$
      151,20 US$
      500
      1,43 US$
      714,00 US$
      1000
      1,34 US$
      1 344,00 US$
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