IXTN21N100

IXTN21N100
Mfr. #:
IXTN21N100
Fabricante:
Littelfuse
Descripción:
MOSFET 21 Amps 100V 0.55 Ohm Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTN21N100 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTN21N100 DatasheetIXTN21N100 Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1 kV
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
550 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
520 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
9.6 mm
Longitud:
38.23 mm
Serie:
IXTN21N100
Tipo de transistor:
1 N-Channel
Ancho:
25.42 mm
Marca:
IXYS
Transconductancia directa - Mín .:
24 S
Otoño:
40 ns
Tipo de producto:
MOSFET
Hora de levantarse:
50 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
100 ns
Tiempo típico de retardo de encendido:
30 ns
Unidad de peso:
1.058219 oz
Tags
IXTN21N, IXTN21, IXTN2, IXTN, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***h
    L***h
    RU

    It didn't come! The money was returned.

    2019-06-20
    D***v
    D***v
    RU

    ok

    2019-05-30
    I***v
    I***v
    RU

    Quality leds, match the description

    2019-04-22
    D***v
    D***v
    RU

    Delivered by mail of russia therefore for a long time. Purchase satisfied. Soldering is good.Packaging is reliable. Legs are not bent. In general, well done chinese. Made soundly and indestructible even by our mail. =) thank you.

    2019-03-15
***ukat
N-Ch 1000V 21A 520W 0,55R SOT227B
***ark
MOSFET, N, SOT-227B; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:21A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:ISOTOP; ;RoHS Compliant: Yes
***nell
MOSFET, N, SOT-227B; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 520W; Transistor Case Style: ISOTOP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Current Id Max: 21A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 550mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 84A; Voltage Vds Typ: 1kV; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4.5V
Parte # Mfg. Descripción Valores Precio
IXTN21N100
DISTI # IXTN21N100-ND
IXYS CorporationMOSFET N-CH 1KV 21A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$32.6900
IXTN21N100
DISTI # 747-IXTN21N100
IXYS CorporationMOSFET 21 Amps 100V 0.55 Ohm Rds
RoHS: Compliant
0
  • 10:$32.6900
  • 30:$30.0400
  • 50:$28.7600
  • 100:$27.9200
  • 200:$25.6200
IXTN21N100LIXYS Corporation*** FREE SHIPPING ORDERS OVER $100 *** 21 A, 1000 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET (Also Known As: IXTN21N100)17
  • 1:$27.3000
IXTN21N100LIXYS Corporation*** FREE SHIPPING ORDERS OVER $100 *** 21 A, 1000 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET17
  • 1:$27.3000
IXTN21N100
DISTI # 9359311
IXYS Corporation 
RoHS: Compliant
0
  • 50:$34.0600
  • 25:$34.6600
  • 10:$35.9200
  • 5:$36.5800
  • 1:$37.9900
Imagen Parte # Descripción
IXTN210P10T

Mfr.#: IXTN210P10T

OMO.#: OMO-IXTN210P10T

Discrete Semiconductor Modules TrenchP Channel Power MOSFETs
IXTN22N100L

Mfr.#: IXTN22N100L

OMO.#: OMO-IXTN22N100L

MOSFET 22 Amps 1000V
IXTN200N10T

Mfr.#: IXTN200N10T

OMO.#: OMO-IXTN200N10T

MOSFET 100V 200A
IXTN200N10L2

Mfr.#: IXTN200N10L2

OMO.#: OMO-IXTN200N10L2-IXYS-CORPORATION

MOSFET N-CH 100V 178A SOT-227
IXTN200N10T

Mfr.#: IXTN200N10T

OMO.#: OMO-IXTN200N10T-IXYS-CORPORATION

MOSFET N-CH 100V 200A SOT-227
IXTN21N50

Mfr.#: IXTN21N50

OMO.#: OMO-IXTN21N50-1190

Nuevo y original
IXTN22N100L

Mfr.#: IXTN22N100L

OMO.#: OMO-IXTN22N100L-IXYS-CORPORATION

MOSFET N-CH 1000V 22A SOT-227
IXTN240N075L2

Mfr.#: IXTN240N075L2

OMO.#: OMO-IXTN240N075L2-IXYS-CORPORATION

MOSFET N-CH
IXTN210P10T

Mfr.#: IXTN210P10T

OMO.#: OMO-IXTN210P10T-IXYS-CORPORATION

Discrete Semiconductor Modules TrenchP Channel Power MOSFETs
IXTN21N100

Mfr.#: IXTN21N100

OMO.#: OMO-IXTN21N100-IXYS-CORPORATION

MOSFET 21 Amps 100V 0.55 Ohm Rds
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IXTN21N100 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
10
32,69 US$
326,90 US$
30
30,04 US$
901,20 US$
50
28,76 US$
1 438,00 US$
100
27,92 US$
2 792,00 US$
200
25,62 US$
5 124,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
Top