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IRF1404STRLPBF

IRF1404STRLPBF
Mfr. #:
IRF1404STRLPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT 40V 162A 4mOhm 160nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF1404STRLPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1404STRLPBF DatasheetIRF1404STRLPBF Datasheet (P4-P6)IRF1404STRLPBF Datasheet (P7-P9)IRF1404STRLPBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
162 A
Rds On - Resistencia de la fuente de drenaje:
3.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
160 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
200 W
Configuración:
Único
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
106 S
Otoño:
26 ns
Tipo de producto:
MOSFET
Hora de levantarse:
140 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
72 ns
Tiempo típico de retardo de encendido:
17 ns
Parte # Alias:
SP001570024
Unidad de peso:
0.139332 oz
Tags
IRF1404ST, IRF1404S, IRF1404, IRF140, IRF14, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;D2Pak;PD 200W;VGS +/-20V
***ure Electronics
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, 40V, 162A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 162A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power D
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 3.6 mOhm 200 nC Surface Mount HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 40V 170A 3-Pin(2+Tab) D2PAK T/R - Rail/Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 40V, 170A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:170A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3.6mohm; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:850A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.6V
***ure Electronics
Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***(Formerly Allied Electronics)
Power MOSFET,N-Ch,VDSS 40V,RDS(ON) 2.7 Milliohms,ID 200A,D2Pak,PD 230W,VGS+/-16V
***ical
Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N, 40V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipa
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***Yang
Trans MOSFET N-CH 30V 23A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET, 30V, 160A, 3.9mΩ
***r Electronics
Power Field-Effect Transistor, 23A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
N-Channel 40 V 3.7 mOhm Surface Mount STripFET II Mosfet - D2PAK
***ical
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 40V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
N-channel 40 V, 0.0043 Ohm typ., 120 A StripFET II Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
STB100 Series 40 V 120 A 4.6 mOhm 300 W 110 nC N-Channel MOSFET - D2PAK
***nell
MOSFET, N CH, 40V, 120A, 0R0043, TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vg
***ure Electronics
Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***Yang
Trans MOSFET N-CH 40V 250A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 40V, 195A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***(Formerly Allied Electronics)
AUIRFS8407 N-channel MOSFET Transistor; 195 A; 250 A; 40 V; 3-Pin D2PAK
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 40V 250A Automotive 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, 40V, 195A, Q101, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Battery Switch; Brushed Motor Drive; Brushless Motor Drive; DC-DC; Electric Power Steering; Glowplug; PTC Heater; Relay Replacement
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 0.004 Ohm 140 nC HEXFET® Power Mosfet - TO-262-3
***nell
MOSFET, N, 40V, 160A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power D
***el Electronic
VISHAY SQM120N04-1M9-GE3MOSFET Transistor, N Channel, 120 A, 40 V, 0.0015 ohm, 10 V, 3 V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 30V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
***icroelectronics
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
***Yang
Transistor MOSFET N-CH 40V 200A 3-Pin H2PAK-2 T/R - Tape and Reel
*** Electronics
STMICROELECTRONICS STH410N4F7-2AG MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
***ment14 APAC
MOSFET, N-CH, 40V, 200A, H2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Source Voltage Vds:40V; On Resistance
***nell
MOSFET, N-CH, 40V, 200A, H2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 200A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 800µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 365W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Parte # Mfg. Descripción Valores Precio
IRF1404STRLPBF
DISTI # V36:1790_13890823		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R800
  • 9600:$0.8270
  • 4800:$0.9189
  • 2400:$1.0209
  • 800:$1.1344
IRF1404STRLPBF
DISTI # V72:2272_13890823		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R755
  • 500:$1.2612
  • 250:$1.3936
  • 100:$1.4249
  • 25:$1.6999
  • 10:$1.7201
  • 1:$1.9536
IRF1404STRLPBF
DISTI # IRF1404STRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 40V 162A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1225In Stock
  • 100:$2.0713
  • 10:$2.5780
  • 1:$2.8500
IRF1404STRLPBF
DISTI # IRF1404STRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 40V 162A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1225In Stock
  • 100:$2.0713
  • 10:$2.5780
  • 1:$2.8500
IRF1404STRLPBF
DISTI # IRF1404STRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 40V 162A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 800:$1.4121
IRF1404STRLPBF
DISTI # 31312101		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R3200
  • 800:$1.5655
IRF1404STRLPBF
DISTI # 30573544		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R800
  • 800:$1.2290
IRF1404STRLPBF
DISTI # 31334993		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R755
  • 500:$1.2612
  • 250:$1.4154
  • 100:$1.4250
  • 25:$1.7000
  • 10:$1.7203
  • 8:$1.9539
IRF1404STRLPBF
DISTI # 30609484		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R150
  • 100:$1.8105
  • 50:$1.8998
  • 10:$2.3077
  • 7:$4.1182
IRF1404STRLPBF
DISTI # IRF1404STRLPBF		Infineon Technologies AGTrans MOSFET N-CH 40V 162A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF1404STRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.9359
  • 1600:$0.9019
  • 3200:$0.8699
  • 4800:$0.8399
  • 8000:$0.8249
IRF1404STRLPBF
DISTI # 32AC7468		Infineon Technologies AGMOSFET, N-CH, 40V, 162A TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:162A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes480
  • 1:$2.6600
  • 10:$2.2800
  • 25:$2.1400
  • 50:$2.0000
  • 100:$1.8600
  • 250:$1.7600
  • 500:$1.6500
IRF1404STRLPBF
DISTI # 70017649		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 0.0035Ohm,ID 162A,D2Pak,PD 200W,VGS +/-20V
RoHS: Compliant		0
  • 800:$4.7200
IRF1404STRLPBF
DISTI # 942-IRF1404STRLPBF		Infineon Technologies AGMOSFET MOSFT 40V 162A 4mOhm 160nC
RoHS: Compliant		978
  • 1:$2.5300
  • 10:$2.1500
  • 100:$1.7200
  • 500:$1.5100
  • 800:$1.2500
IRF1404STRLPBFInternational Rectifier 
RoHS: Not Compliant		1600
  • 1000:$0.7800
  • 500:$0.8200
  • 100:$0.8500
  • 25:$0.8900
  • 1:$0.9600
IRF1404STRLPBF
DISTI # 9154935P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 40V 162A D2PAK, RL555
  • 25:£0.5780
IRF1404STRLPBF
DISTI # IRF1404SPBF-GURT		Infineon Technologies AGN-Ch 40V 162A 200W 0,004R DPak
RoHS: Compliant		630
  • 10:€1.0600
  • 50:€0.7570
  • 200:€0.6570
  • 500:€0.6325
IRF1404STRLPBFInternational Rectifier 804
    IRF1404STRLPBF
    DISTI # 2777397    		Infineon Technologies AGMOSFET, N-CH, 40V, 162A TO-263
    RoHS: Compliant    		480
    • 1:£1.0900
    • 10:£0.9060
    • 100:£0.8120
    • 250:£0.7490
    • 500:£0.6990
    IRF1404STRLPBF
    DISTI # 2777397    		Infineon Technologies AGMOSFET, N-CH, 40V, 162A TO-263
    RoHS: Compliant    		480
    • 5:$3.4300
    • 25:$2.9900
    • 100:$2.4400
    • 250:$2.0600
    • 500:$1.7800
    • 1000:$1.6800
    • 5000:$1.6000
    IRF1404STRLPBF
    DISTI # C1S322000479175    		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		150
    • 100:$1.4200
    • 50:$1.4900
    • 10:$1.8100
    • 1:$3.2300
    IRF1404STRLPBF
    DISTI # C1S322000479157    		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		755
    • 250:$1.3968
    • 100:$1.4593
    • 25:$1.5503
    • 10:$1.7225
    IRF1404STRLPBF
    DISTI # C1S322000479166    		Infineon Technologies AGTrans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		3200
    • 2400:$0.8700
    • 1600:$0.9380
    • 800:$1.2200
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    Disponibilidad
    Valores:
    Available
    En orden:
    1987
    Ingrese la cantidad:
    El precio actual de IRF1404STRLPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,39 US$
    2,39 US$
    10
    2,03 US$
    20,30 US$
    100
    1,62 US$
    162,00 US$
    500
    1,42 US$
    710,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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