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FCU600N65S3R0

FCU600N65S3R0
Mfr. #:
FCU600N65S3R0
Fabricante:
ON Semiconductor
Descripción:
SUPERFET3 650V IPAK PKG
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCU600N65S3R0 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FCU600N65S3R0 más información
Atributo del producto
Valor de atributo
Tags
FCU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK
***et
SUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin IPAK Tube
***ical
Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) IPAK Tube
***Components
SUPERFET3 650V IPAK PKG
***ark
Mosfet, N-Ch, 650V, 6A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.493Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 6A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.493ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:54W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET III Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 650V, 6A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.493ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:54W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET III Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
SuperFET® III MOSFETs
ON Semiconductor SuperFET® III MOSFETs are high voltage (700V at TJ = 150ºC) super-junction (SJ) MOSFETs with charge balance technology. This technology provides outstanding low on-resistance (59mΩ or 62mΩ RDS(on) typical) and lower gate charge performance (78nC Qg typical). SuperFET III MOSFETs are designed to minimize conduction loss, offer superior switching performance, and withstand extreme rise rate of the drain-source voltage (dv/dt). Fairchild SuperFET III is ideal for various power systems for miniaturization and higher efficiency.
Parte # Mfg. Descripción Valores Precio
FCU600N65S3R0
DISTI # V99:2348_21690178		ON SemiconductorN-Channel MOSFET1800
  • 2550:$0.4648
  • 525:$0.6388
  • 150:$0.7217
  • 75:$0.9187
  • 10:$1.0308
  • 1:$1.1986
FCU600N65S3R0
DISTI # V36:1790_21690178		ON SemiconductorN-Channel MOSFET0
  • 1800000:$0.3932
  • 900000:$0.3958
  • 180000:$0.6269
  • 18000:$1.0320
  • 1800:$1.1000
FCU600N65S3R0
DISTI # FCU600N65S3R0OS-ND		ON SemiconductorSUPERFET3 650V IPAK PKG
RoHS: Not compliant
Min Qty: 1
Container: Tube		1790In Stock
  • 5400:$0.4713
  • 3600:$0.4961
  • 1800:$0.5316
  • 100:$0.8151
  • 25:$0.9924
  • 10:$1.0450
  • 1:$1.1700
FCU600N65S3R0
DISTI # 31283977		ON SemiconductorN-Channel MOSFET10800
  • 1800:$1.1000
FCU600N65S3R0
DISTI # 31315867		ON SemiconductorN-Channel MOSFET1800
  • 14:$1.1986
FCU600N65S3R0
DISTI # FCU600N65S3R0		ON SemiconductorSUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin IPAK Tube - Rail/Tube (Alt: FCU600N65S3R0)
RoHS: Compliant
Min Qty: 1800
Container: Tube		Americas - 0
  • 18000:$0.4159
  • 9000:$0.4269
  • 5400:$0.4319
  • 3600:$0.4379
  • 1800:$0.4409
FCU600N65S3R0
DISTI # 62AC6867		ON SemiconductorMOSFET, N-CH, 650V, 6A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.493ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power DissipationRoHS Compliant: Yes1795
  • 10000:$0.4360
  • 2500:$0.4520
  • 1000:$0.5110
  • 500:$0.6470
  • 100:$0.7320
  • 10:$0.9530
  • 1:$1.1100
FCU600N65S3R0
DISTI # 863-FCU600N65S3R0		ON SemiconductorMOSFET SUPERFET3 650V 6A 600 mOhm
RoHS: Compliant		1656
  • 1:$1.1000
  • 10:$0.9440
  • 100:$0.7250
  • 500:$0.6410
  • 1000:$0.5060
  • 2500:$0.4480
  • 10000:$0.4320
FCU600N65S3R0
DISTI # 2895718		ON SemiconductorMOSFET, N-CH, 650V, 6A, TO-251
RoHS: Compliant		1790
  • 5000:$0.7490
  • 1000:$0.7940
  • 500:$0.8590
  • 250:$1.0500
  • 100:$1.2800
  • 25:$1.8800
  • 5:$2.1900
FCU600N65S3R0
DISTI # 2895718		ON SemiconductorMOSFET, N-CH, 650V, 6A, TO-2511790
  • 500:£0.4650
  • 250:£0.4950
  • 100:£0.5250
  • 10:£0.7370
  • 1:£0.9110
Imagen Parte # Descripción
FCU600N65S3R0

Mfr.#: FCU600N65S3R0

OMO.#: OMO-FCU600N65S3R0

 MOSFET SUPERFET3 650V 6A 600 mOhm
FCU600N60Z

Mfr.#: FCU600N60Z

OMO.#: OMO-FCU600N60Z-1190

 Nuevo y original
FCU600N65S3R0

Mfr.#: FCU600N65S3R0

OMO.#: OMO-FCU600N65S3R0-ON-SEMICONDUCTOR

 SUPERFET3 650V IPAK PKG
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de FCU600N65S3R0 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,69 US$
0,69 US$
10
0,65 US$
6,51 US$
100
0,62 US$
61,65 US$
500
0,58 US$
291,15 US$
1000
0,55 US$
548,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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