FDT86102LZ

Mfr. #:: FDT86102LZ
Fabricante:: ON Semiconductor
Descripción:: MOSFET N-CH 100V 6.6A SOT-223
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDT86102LZ Ficha de datos
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Más información:: FDT86102LZ más información

Atributo del producto
Valor de atributo

Fabricante: Fairchi

categoria de producto: FET - Single

Serie: PowerTrenchR

embalaje: Embalaje alternativo de Digi-ReelR

Unidad de peso: 0.008826 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: TO-261-4, TO-261AA

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: SOT-223-4

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 1W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 100V

Entrada-Capacitancia-Ciss-Vds: 1490pF @ 50V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 6.6A (Ta)

Rds-On-Max-Id-Vgs: 28 mOhm @ 6.6A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Puerta-Carga-Qg-Vgs: 25nC @ 10V

Disipación de potencia Pd: 2.2 W

Temperatura máxima de funcionamiento: + 150 C

Id-corriente-de-drenaje-continua: 6.6 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Resistencia a la fuente de desagüe de Rds: 28 mOhms

Polaridad del transistor: Canal N

Qg-Gate-Charge: 17 nC

Transconductancia directa-Mín.: 26 S

Tags: FDT86102, FDT8610, FDT861, FDT8, FDT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDT86102LZ Descripción

***ure Electronics: N-Channel 100 V 6.6 A 28 mOhm PowerTrench® Mosfet - SOT-223

***Semiconductor: N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ

***et Europe: Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

***ment14 APAC: MOSFET, N CH, 100V, 6.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:40A; Voltage Vgs th Max:3V

FDT86102LZ Más información

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

N-Channel PowerTrench® MOSFETs: ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDT86102LZ DISTI # FDT86102LZFSTR-ND	ON Semiconductor	MOSFET N-CH 100V 6.6A SOT-223 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.7425
FDT86102LZ DISTI # FDT86102LZFSCT-ND	ON Semiconductor	MOSFET N-CH 100V 6.6A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8214 500:$0.9914 100:$1.2746 10:$1.5860 1:$1.7600
FDT86102LZ DISTI # FDT86102LZFSDKR-ND	ON Semiconductor	MOSFET N-CH 100V 6.6A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8214 500:$0.9914 100:$1.2746 10:$1.5860 1:$1.7600
FDT86102LZ DISTI # FDT86102LZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT86102LZ) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
FDT86102LZ DISTI # FDT86102LZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT86102LZ) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.6529 8000:$0.6489 16000:$0.6409 24000:$0.6319 40000:$0.6169
FDT86102LZ DISTI # 27T6450	ON Semiconductor	MOSFET Transistor, N Channel, 6.6 A, 100 V, 0.022 ohm, 10 V, 1.4 V	0	1:$0.6750 4000:$0.6630 8000:$0.6500 16000:$0.6250 24000:$0.6020 40000:$0.6000
FDT86102LZ. DISTI # 29AC6323	Fairchild Semiconductor Corporation	FET 100V 28.0 MOHM SOT223 ROHS COMPLIANT: YES	0	1:$0.6750 4000:$0.6630 8000:$0.6500 16000:$0.6250 24000:$0.6020 40000:$0.6000
FDT86102LZ DISTI # 512-FDT86102LZ	ON Semiconductor	MOSFET 100V N-Channel PowerTrench MOSFET RoHS: Compliant	0	1:$1.4800 10:$1.2500 100:$1.0000 500:$0.8760 1000:$0.7250 4000:$0.6510

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	Mfr.#: FDT86102 OMO.#: OMO-FDT86102-1190	Nuevo y original
	Mfr.#: FDT86102LZ OMO.#: OMO-FDT86102LZ-ON-SEMICONDUCTOR	MOSFET N-CH 100V 6.6A SOT-223
	Mfr.#: FDT86106 OMO.#: OMO-FDT86106-1190	Nuevo y original
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	Mfr.#: FDT86256 OMO.#: OMO-FDT86256-ON-SEMICONDUCTOR	MOSFET N-CH 150V 1.2A SOT-223-4

Disponibilidad

Valores:: Available
En orden:: 4500
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El precio actual de FDT86102LZ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,90 US$~~; ~~0,90 US$~~

10: ~~0,86 US$~~; ~~8,55 US$~~

100: ~~0,81 US$~~; ~~81,00 US$~~

500: ~~0,76 US$~~; ~~382,50 US$~~

1000: ~~0,72 US$~~; ~~720,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

FDT86102 3
FDT8610 5
FDT861 7
FDT8 12
FDT 103

FDT86102LZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes