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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SUD35N10-26P-GE3 DISTI # V36:1790_09215450 | Vishay Intertechnologies | MOSFET N-CH D-S 100V DPAK | 0 |
|
| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 35A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 3516In Stock |
|
| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 35A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 3516In Stock |
|
| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 35A DPAK RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | 2000In Stock |
|
| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: SUD35N10-26P-GE3) RoHS: Compliant Min Qty: 2000 Container: Reel | Americas - 0 |
|
| SUD35N10-26P-GE3 DISTI # SUD35N10-26P-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 12A 3-Pin TO-252 T/R (Alt: SUD35N10-26P-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
| SUD35N10-26P-GE3 DISTI # 41R3809 | Vishay Intertechnologies | N CHANNEL MOSFET, 100V, 35A,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.4V,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
|
| SUD35N10-26P-GE3. DISTI # 15AC4547 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.4V,Power Dissipation Pd:8.3W,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
|
| SUD35N10-26P-GE3 DISTI # 781-SUD35N10-26P-GE3 | Vishay Intertechnologies | MOSFET 100V 35A 83W 26mohm @ 10V RoHS: Compliant | 1896 |
|
| SUD35N1026PGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 12A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 2000 | |
| SUD35N10-26P-GE3 | Vishay Intertechnologies | MOSFET 100V 35A 83W 26mohm @ 10V | Americas - 2000 |
|
| SUD40N10-25-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SUD35N10-26P-GE3 | Americas - |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: LAN8710AI-EZK-TR OMO.#: OMO-LAN8710AI-EZK-TR |
Ethernet ICs 10/100 Ethernet XCVR w/HPAutoMDIX INDTEMP |
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Mfr.#: STR2550 OMO.#: OMO-STR2550 |
Bipolar Transistors - BJT 50mA High Volt PNP Neg 500V Pwr Trans |
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Mfr.#: IRF5210STRLPBF OMO.#: OMO-IRF5210STRLPBF |
MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC |
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Mfr.#: CSD19531Q5AT OMO.#: OMO-CSD19531Q5AT |
MOSFET 100V,5.3mOhm,NexFET Power MOSFET |
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Mfr.#: PIC32MK0512MCF064-I/PT OMO.#: OMO-PIC32MK0512MCF064-I-PT |
32-bit Microcontrollers - MCU MCU32, 120MHz, 4 I2C, 6 I2S, USB FS, CAN 2.0B, 12-bit ADC, Motor Control |
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Mfr.#: TPS7B6933QDCYRQ1 OMO.#: OMO-TPS7B6933QDCYRQ1 |
LDO Voltage Regulators 3.3-V Output Voltage |
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Mfr.#: PCM4222PFBR OMO.#: OMO-PCM4222PFBR |
Audio A/D Converter ICs 24-Bit/216kHz 124dB |
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Mfr.#: FQD3P50TM-AM002BLT OMO.#: OMO-FQD3P50TM-AM002BLT |
MOSFET P-CH/500V/2.1A 4.9OHM |
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Mfr.#: CC0603KRX7R9BB104 OMO.#: OMO-CC0603KRX7R9BB104 |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10% |
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Mfr.#: CC0805KRX7R9BB104 OMO.#: OMO-CC0805KRX7R9BB104 |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10% |
