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NIMD6001ANR2G

NIMD6001ANR2G
Mfr. #:
NIMD6001ANR2G
Fabricante:
ON Semiconductor
Descripción:
RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NIMD6001ANR2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NIMD6001ANR2G DatasheetNIMD6001ANR2G Datasheet (P4-P6)NIMD6001ANR2G Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
EN Semiconductor
categoria de producto
PMIC - Interruptores de distribución de energía, controladores de carga
Serie
NIMD6001A
embalaje
Tape & Reel (TR)
Unidad de peso
0.019048 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Tipo de entrada
-
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de salida
Canal N
Características
-
Número de canales
2 Channel
Interfaz
Encendido apagado
Paquete de dispositivo de proveedor
8-SOIC
Relación de entrada: salida
1899/12/30 1:01:00
Configuración
Doble
Número de salidas
2
Suministro de voltaje Vcc-Vdd
Not Required
Protección contra fallas
-
Configuración de salida
Lado bajo
Rds-On-Typ
60 mOhm
Carga de voltaje
60V (Max)
Salida de corriente máxima
3.3A
Tipo de interruptor
Relé, controlador de solenoide
Tipo transistor
2 N-Channel
Id-corriente-de-drenaje-continua
3.3 A
Vds-Drain-Source-Breakdown-Voltage
67 V
Resistencia a la fuente de desagüe de Rds
110 mOhms
Polaridad del transistor
Canal N
Tags
NIMD6001A, NIMD60, NIMD6, NIMD, NIM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***roFlash
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Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P
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30V 4.1A 1.3W 42m´Î@10V5.7A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W
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NTMD4N03R2G Dual N-channel MOSFET Transistor; 4 A; 30 V; 8-Pin SOIC
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Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin SOIC T/R - Tape and Reel
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N-Channel 30 V 48 mOhm 2 W Surface Mount Power MOSFET - SOIC-8
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Power MOSFET 30V 4A 60 mOhm Dual N-Channel S0-8
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MOSFET, DUAL N-CH, 30V, 4A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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ZXMHC3 Series 30 V 33 mOhm 2N/2P-Ch. H-Bridge Enhancement Mode MOSFET - SOIC-8
***ark
MOSFET, COMP, H-BRIDE, 30V, SO8; Channel Type:Complementary N and P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:3.98A; No. of Pins:8Pins RoHS Compliant: Yes
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N and 2 P-Channel (H-Bridge) Logic Level Gate -55°C~150°C TJ 33m Ω @ 5A, 10V 3V @ 250μA MOSFET 2N/2P-CH 30V 8-SOIC
***nell
MOSFET, COMP, H-BRIDE, 30V, SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.98A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 870mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 5A; Continuous Drain Current Id, P Channel: -4.1A; Drain Source Voltage Vds, N Channel: 30V; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Half Bridge; On Resistance Rds(on), N Channel: 0.033ohm; On Resistance Rds(on), P Channel: 0.055ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
Parte # Mfg. Descripción Valores Precio
NIMD6001ANR2G
DISTI # NIMD6001ANR2G-ND		ON SemiconductorIC MOSFET DVR 60V 3.3A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NIMD6001ANR2G
    DISTI # NIMD6001ANR2G    		ON SemiconductorTrans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001ANR2G)
    Min Qty: 447
    Container: Bulk    		Americas - 0
    • 4470:$0.6909
    • 2235:$0.7079
    • 1341:$0.7169
    • 894:$0.7269
    • 447:$0.7319
    NIMD6001ANR2GON SemiconductorBuffer/Inverter Based Peripheral Driver
    RoHS: Compliant    		14
    • 1000:$0.7400
    • 500:$0.7800
    • 100:$0.8100
    • 25:$0.8400
    • 1:$0.9100
    Imagen Parte # Descripción
    NIMD6001ANR2G

    Mfr.#: NIMD6001ANR2G

    OMO.#: OMO-NIMD6001ANR2G-ON-SEMICONDUCTOR

    		 RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
    NIMD6001A

    Mfr.#: NIMD6001A

    OMO.#: OMO-NIMD6001A-1190

    		 Nuevo y original
    NIMD6001AR2G

    Mfr.#: NIMD6001AR2G

    OMO.#: OMO-NIMD6001AR2G-1190

    		 Nuevo y original
    NIMD6001N

    Mfr.#: NIMD6001N

    OMO.#: OMO-NIMD6001N-1190

    		 Nuevo y original
    NIMD6001NR2G

    Mfr.#: NIMD6001NR2G

    OMO.#: OMO-NIMD6001NR2G-1190

    		 Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001NR2G)
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de NIMD6001ANR2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,04 US$
    1,04 US$
    10
    0,98 US$
    9,84 US$
    100
    0,93 US$
    93,27 US$
    500
    0,88 US$
    440,45 US$
    1000
    0,83 US$
    829,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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