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SIHB12N50E-GE3

SIHB12N50E-GE3
Mfr. #:
SIHB12N50E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB12N50E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N50E-GE3 DatasheetSIHB12N50E-GE3 Datasheet (P4-P6)SIHB12N50E-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHB12N50E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
550 V
Id - Corriente de drenaje continua:
10.5 A
Rds On - Resistencia de la fuente de drenaje:
380 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
25 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
114 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
A granel
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
12 ns
Tipo de producto:
MOSFET
Hora de levantarse:
16 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
29 ns
Tiempo típico de retardo de encendido:
13 ns
Unidad de peso:
0.050717 oz
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3
***ark
Transistor Polarity:N Channel
***et
N-CHANNEL 500V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 10.5A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		12In Stock
  • 1000:$1.2282
  • 500:$1.4823
  • 100:$1.9058
  • 10:$2.3720
  • 1:$2.6300
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N50E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1199
  • 2000:$1.0869
  • 4000:$1.0429
  • 6000:$1.0139
  • 10000:$0.9869
SIHB12N50E-GE3
DISTI # 43Y2393		Vishay IntertechnologiesMOSFET Transistor, N Channel, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V RoHS Compliant: Yes747
  • 1:$2.4000
  • 10:$1.9900
  • 25:$1.8400
  • 50:$1.6900
  • 100:$1.5400
  • 250:$1.4500
  • 500:$1.3500
SIHB12N50E-GE3
DISTI # 78-SIHB12N50E-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		997
  • 1:$2.4000
  • 10:$1.9900
  • 100:$1.5400
  • 500:$1.3500
  • 1000:$1.2900
SIHB12N50E-GE3
DISTI # 2471937		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		747
  • 5:£1.6100
  • 25:£1.5000
  • 100:£1.1700
  • 250:£1.1000
  • 500:£1.0200
SIHB12N50E-GE3
DISTI # 2471937RL		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		0
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3
DISTI # 2471937		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		747
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    Imagen Parte # Descripción
    DZ2705100L

    Mfr.#: DZ2705100L

    OMO.#: OMO-DZ2705100L

    		 Zener Diodes 5.1V 5% 120mW FLT LD 0.6x1.4mm
    AS0805KRX7R0BB103

    Mfr.#: AS0805KRX7R0BB103

    OMO.#: OMO-AS0805KRX7R0BB103

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.01uF 10% 100V AEC-Q200
    AS0805KRX7R0BB103

    Mfr.#: AS0805KRX7R0BB103

    OMO.#: OMO-AS0805KRX7R0BB103-YAGEO

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.01uF 10% 100V AEC-Q200
    CRCW12061K50FKEAC

    Mfr.#: CRCW12061K50FKEAC

    OMO.#: OMO-CRCW12061K50FKEAC-VISHAY-DALE

    		 D25/CRCW1206-C 100 1K5 1% ET1
    CRCW06030000Z0EAC

    Mfr.#: CRCW06030000Z0EAC

    OMO.#: OMO-CRCW06030000Z0EAC-VISHAY-DALE

    		 RES SMD 0 OHM JUMP 1/10W 0603
    DZ2705100L

    Mfr.#: DZ2705100L

    OMO.#: OMO-DZ2705100L-PANASONIC

    		 Zener Diodes 5.1V 5% 120mW FLT LD 0.6x1.4mm
    C0805C474K5RACAUTO7210

    Mfr.#: C0805C474K5RACAUTO7210

    OMO.#: OMO-C0805C474K5RACAUTO7210-1190

    		 CAPACITOR CERAMIC 0.47 UF 10% TOL 50V X7R 0805
    CRCW120610R0FKEAC

    Mfr.#: CRCW120610R0FKEAC

    OMO.#: OMO-CRCW120610R0FKEAC-VISHAY-DALE

    		 D25/CRCW1206-C 100 10R 1% ET1
    F380J106MMAAH3

    Mfr.#: F380J106MMAAH3

    OMO.#: OMO-F380J106MMAAH3-AVX

    		 Tantalum Capacitors - Polymer SMD 6.3V 10uF 20% 0603 ESR=200Ohm AEC-Q200
    Disponibilidad
    Valores:
    978
    En orden:
    2961
    Ingrese la cantidad:
    El precio actual de SIHB12N50E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,39 US$
    2,39 US$
    10
    1,98 US$
    19,80 US$
    100
    1,54 US$
    154,00 US$
    500
    1,34 US$
    670,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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