FDS8935

FDS8935
Mfr. #:
FDS8935
Fabricante:
ON Semiconductor
Descripción:
MOSFET 2P-CH 80V 2.1A 8SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS8935 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
FDS8935 más información
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET: matrices
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Doble
Tipo FET
2 P-Channel (Dual)
Potencia máxima
1.6W
Tipo transistor
2 P-Channel
Drenaje-a-fuente-voltaje-Vdss
80V
Entrada-Capacitancia-Ciss-Vds
879pF @ 40V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
2.1A
Rds-On-Max-Id-Vgs
183 mOhm @ 2.1A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
19nC @ 10V
Disipación de potencia Pd
3.1 W
Temperatura máxima de funcionamiento
+ 150 C
Id-corriente-de-drenaje-continua
- 2.1 A
Vds-Drain-Source-Breakdown-Voltage
- 80 V
Resistencia a la fuente de desagüe de Rds
183 mOhms
Polaridad del transistor
P-Channel
Transconductancia directa-Mín.
6.4 S
Tags
FDS893, FDS89, FDS8, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual P-Channel -80 V 247 mOhm 19 nC 3.1 W PowerTrench Mosfet - SOIC-8
***Semiconductor
Dual P-Channel PowerTrench® MOSFET -80V, -2.1A, 183mΩ
***rchild Semiconductor
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, PP CH, 80V, 2.1A, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.148ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
FDS8935 Dual P-Channel PowerTrench® MOSFET
ON Semiconductor FDS8935 Dual P-Channel PowerTrench® MOSFET is optimized for switching performance and ruggedness. This MOSFET features high-performance Trench technology for extremely low on-resistance. The FDS8935 MOSFET offers high power and current handling capability in a widely used SO-8 surface mount package. This MOSFET is designed for use in load switch and synchronous rectifier applications.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDS8935
DISTI # V72:2272_06338076
ON SemiconductorDUAL P-CHANNEL 80/20V POWERTRE1825
  • 1000:$0.5554
  • 500:$0.7020
  • 250:$0.7746
  • 100:$0.8045
  • 25:$1.0355
  • 10:$1.0469
  • 1:$1.2281
FDS8935
DISTI # FDS8935TR-ND
ON SemiconductorMOSFET 2P-CH 80V 2.1A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.6160
FDS8935
DISTI # FDS8935CT-ND
ON SemiconductorMOSFET 2P-CH 80V 2.1A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
FDS8935
DISTI # FDS8935DKR-ND
ON SemiconductorMOSFET 2P-CH 80V 2.1A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
FDS8935
DISTI # 30722685
ON SemiconductorDUAL P-CHANNEL 80/20V POWERTRE1825
  • 1000:$0.5556
  • 500:$0.7020
  • 250:$0.7746
  • 100:$0.8045
  • 25:$1.0355
  • 13:$1.0469
FDS8935
DISTI # 30614621
ON SemiconductorDUAL P-CHANNEL 80/20V POWERTRE15
  • 10:$1.4407
FDS8935
DISTI # FDS8935
ON SemiconductorTrans MOSFET P-CH 80V 2.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8935)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5219
  • 5000:$0.5189
  • 10000:$0.5119
  • 15000:$0.5059
  • 25000:$0.4929
FDS8935
DISTI # 27T6449
ON SemiconductorTransistor Polarity:Dual P Channel,Continuous Drain Current Id:-2.1A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.148ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V,Power Dissipation Pd:3.1W RoHS Compliant: Yes0
  • 1:$0.5470
  • 2500:$0.5470
  • 5000:$0.5270
  • 7500:$0.5150
  • 12500:$0.4950
FDS8935
DISTI # 88T3367
ON SemiconductorMOSFET, PP CH, 80V, 2.1A, 8SOIC,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-2.1A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.148ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V RoHS Compliant: Yes2222
  • 1:$1.3200
  • 10:$1.1200
  • 25:$1.0300
  • 50:$0.9470
  • 100:$0.8610
  • 250:$0.8110
  • 500:$0.7610
  • 1000:$0.6000
FDS8935
DISTI # 512-FDS8935
ON SemiconductorMOSFET -80V Dual P-Channel PowerTrench MOSFET
RoHS: Compliant
4753
  • 1:$1.3200
  • 10:$1.1200
  • 100:$0.8610
  • 500:$0.7610
  • 1000:$0.6000
FDS8935Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.1A I(D), 80V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
35
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
FDS8935
DISTI # 2083351
ON SemiconductorMOSFET, PP CH, 80V, 2.1A, 8SOIC
RoHS: Compliant
2272
  • 5:£1.1800
  • 25:£1.0600
  • 100:£0.8160
FDS8935
DISTI # C1S541901560443
ON SemiconductorTrans MOSFET P-CH 80V 2.1A 8-Pin SOIC T/R
RoHS: Compliant
15
  • 10:$1.1300
  • 1:$2.2100
FDS8935
DISTI # C1S226600604859
ON SemiconductorTrans MOSFET P-CH 80V 2.1A 8-Pin SOIC N T/R
RoHS: Compliant
1825
  • 250:$0.7746
  • 100:$0.8045
  • 25:$1.0355
  • 10:$1.0469
FDS8935
DISTI # 2083351
ON SemiconductorMOSFET, PP CH, 80V, 2.1A, 8SOIC
RoHS: Compliant
2292
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.3700
Imagen Parte # Descripción
FDS4470

Mfr.#: FDS4470

OMO.#: OMO-FDS4470

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FDS8882

Mfr.#: FDS8882

OMO.#: OMO-FDS8882

MOSFET 30V 9A N-Channel PowerTrench
FDS6912

Mfr.#: FDS6912

OMO.#: OMO-FDS6912

MOSFET SO-8 DUAL N-CH 30V
FDS7060N7

Mfr.#: FDS7060N7

OMO.#: OMO-FDS7060N7

MOSFET 30V N-Ch PowerTrench
FDS89161LZ

Mfr.#: FDS89161LZ

OMO.#: OMO-FDS89161LZ-ON-SEMICONDUCTOR

Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R
FDS6673BZ_F085

Mfr.#: FDS6673BZ_F085

OMO.#: OMO-FDS6673BZ-F085-126

IGBT Transistors MOSFET -30V P-Channel PowerTrench
FDS01701.SA

Mfr.#: FDS01701.SA

OMO.#: OMO-FDS01701-SA-1190

Nuevo y original
FDS6900S-T1-GE3

Mfr.#: FDS6900S-T1-GE3

OMO.#: OMO-FDS6900S-T1-GE3-1190

Nuevo y original
FDS8426_NL

Mfr.#: FDS8426_NL

OMO.#: OMO-FDS8426-NL-1190

Nuevo y original
FDS6570A-CUT TAPE

Mfr.#: FDS6570A-CUT TAPE

OMO.#: OMO-FDS6570A-CUT-TAPE-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de FDS8935 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,74 US$
0,74 US$
10
0,70 US$
7,02 US$
100
0,67 US$
66,54 US$
500
0,63 US$
314,20 US$
1000
0,59 US$
591,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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