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CY7C25442KV18-300BZI

CY7C25442KV18-300BZI
Mfr. #:
CY7C25442KV18-300BZI
Fabricante:
Cypress Semiconductor
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CY7C25442KV18-300BZI Ficha de datos
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CY7C25442KV18-300BZI más información CY7C25442KV18-300BZI Product Details
Atributo del producto
Valor de atributo
Tags
CY7C25442, CY7C2544, CY7C254, CY7C25, CY7C2, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
SRAM Chip Sync Dual 1.8V 72M-bit 2M x 36 0.45ns 165-Pin FBGA Tray
***i-Key
IC SRAM 72M PARALLEL 165FBGA
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Cypress QDR-II+ DDR-II+ Sync SRAM
Cypress' QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT). The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
Imagen Parte # Descripción
CY7C25442KV18-333BZXI

Mfr.#: CY7C25442KV18-333BZXI

OMO.#: OMO-CY7C25442KV18-333BZXI

 SRAM 72Mb, 1.8v, 333Mhz (2Mx36) QDR II SRAM
CY7C25442KV18-300BZI

Mfr.#: CY7C25442KV18-300BZI

OMO.#: OMO-CY7C25442KV18-300BZI

 SRAM 72MB (2Mx36) 1.8v 300MHz QDR II SRAM
CY7C25442KV18-333BZI

Mfr.#: CY7C25442KV18-333BZI

OMO.#: OMO-CY7C25442KV18-333BZI

 SRAM 72MB (2Mx36) 1.8v 333MHz QDR II SRAM
CY7C25442KV18-333BZI

Mfr.#: CY7C25442KV18-333BZI

OMO.#: OMO-CY7C25442KV18-333BZI-CYPRESS-SEMICONDUCTOR

 Nuevo y original
CY7C25442KV18-300BZI

Mfr.#: CY7C25442KV18-300BZI

OMO.#: OMO-CY7C25442KV18-300BZI-CYPRESS-SEMICONDUCTOR

 Nuevo y original
CY7C25442KV18-333BZXI

Mfr.#: CY7C25442KV18-333BZXI

OMO.#: OMO-CY7C25442KV18-333BZXI-CYPRESS-SEMICONDUCTOR

 SRAM 72Mb, 1.8v, 333Mhz (2Mx36) QDR II SRAM
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de CY7C25442KV18-300BZI es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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