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SQJ401EP-T2_GE3

SQJ401EP-T2_GE3
Mfr. #:
SQJ401EP-T2_GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SQJ401EP-T2_GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8L-4
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
12 V
Id - Corriente de drenaje continua:
32 A
Rds On - Resistencia de la fuente de drenaje:
6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
600 mV
Vgs - Voltaje puerta-fuente:
8 V
Qg - Carga de puerta:
109 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
83 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SQ
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tags
SQJ401EP-T, SQJ401, SQJ40, SQJ4, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Imagen Parte # Descripción
SQJ401EP-T1_GE3

Mfr.#: SQJ401EP-T1_GE3

OMO.#: OMO-SQJ401EP-T1-GE3

 MOSFET P-Channel 12V AEC-Q101 Qualified
SQJ401EP-T2_GE3

Mfr.#: SQJ401EP-T2_GE3

OMO.#: OMO-SQJ401EP-T2-GE3

 MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3
SQJ401EP-T1-GE3

Mfr.#: SQJ401EP-T1-GE3

OMO.#: OMO-SQJ401EP-T1-GE3-317

 RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET
SQJ401EP-T1_GE3

Mfr.#: SQJ401EP-T1_GE3

OMO.#: OMO-SQJ401EP-T1-GE3-VISHAY

 MOSFET P-CH 12V 32A POWERPAKSO-8
SQJ401EP-T1

Mfr.#: SQJ401EP-T1

OMO.#: OMO-SQJ401EP-T1-1190

 Nuevo y original
SQJ401EPT1GE3

Mfr.#: SQJ401EPT1GE3

OMO.#: OMO-SQJ401EPT1GE3-1190

 Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de SQJ401EP-T2_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,86 US$
1,86 US$
10
1,54 US$
15,40 US$
100
1,20 US$
120,00 US$
500
1,05 US$
525,00 US$
1000
0,87 US$
869,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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