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BGB 741L7ESD E6327

BGB 741L7ESD E6327
Mfr. #:
BGB 741L7ESD E6327
Fabricante:
Infineon Technologies
Descripción:
RF Amplifier RF BIP TRANSISTORS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BGB 741L7ESD E6327 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BGB 741L7ESD E6327 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Amplificador de RF
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TSLP-7-1
Escribe:
LNA MMIC de banda ancha resistente a ESD
Frecuencia de operación:
50 MHz to 5.5 GHz
P1dB - Punto de compresión:
- 6.5 dBm
Ganar:
20 dB
Voltaje de suministro operativo:
3 V
NF - Figura de ruido:
1.05 dB
Frecuencia de prueba:
1.5 GHz
OIP3 - Intercepción de tercer orden:
1 dBm
Corriente de suministro de funcionamiento:
10 mA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
BGB741L7
Embalaje:
Carrete
Marca:
Infineon Technologies
Número de canales:
1 Channel
Pd - Disipación de energía:
120 mW
Tipo de producto:
Amplificador de RF
Cantidad de paquete de fábrica:
7500
Subcategoría:
Circuitos integrados inalámbricos y RF
Voltaje de suministro - Máx:
4 V
Voltaje de suministro - Min:
1.8 V
Parte # Alias:
BGB741L7ESDE6327XT BGB741L7ESDE6327XTSA1 SP000442946
Unidad de peso:
0.000071 oz
Tags
BGB741L7ESDE6327, BGB741L7ESDE, BGB74, BGB7, BGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    K***v
    K***v
    RU

    92 days from purchase to leningrad. 92, carl! I had already forgotten what project i needed. Track tracking was not. Carrier for a month, as reported that the parcel was delivered. Where she was all the time is not known.Looks workable and neat, as will be in fact-we will see. The seller, in principle, can recommend. But it's up to you.

    2019-05-15
    E**w
    E**w
    MD

    Super

    2019-03-12
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
BGB 741L7ESD E6327
DISTI # C1S322000437197		Infineon Technologies AGHigh-Performance Broad Band LNA MMIC Automotive 6-Pin TSLP EP T/R
RoHS: Compliant		22
  • 10:$0.5920
BGB741L7ESDE6327XTSA1
DISTI # BGB741L7ESDE6327XTSA1CT-ND		Infineon Technologies AGIC AMP CELL 50MHZ-5.5GHZ TSLP7-1
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		69In Stock
  • 1000:$0.4854
  • 500:$0.6149
  • 250:$0.6958
  • 100:$0.7928
  • 25:$0.9060
  • 10:$1.0030
  • 1:$1.1300
BGB741L7ESDE6327XTSA1
DISTI # BGB741L7ESDE6327XTSA1DKR-ND		Infineon Technologies AGIC AMP CELL 50MHZ-5.5GHZ TSLP7-1
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		69In Stock
  • 1000:$0.4854
  • 500:$0.6149
  • 250:$0.6958
  • 100:$0.7928
  • 25:$0.9060
  • 10:$1.0030
  • 1:$1.1300
BGB741L7ESDE6327XTSA1
DISTI # BGB741L7ESDE6327XTSA1TR-ND		Infineon Technologies AGIC AMP CELL 50MHZ-5.5GHZ TSLP7-1
RoHS: Compliant
Min Qty: 7500
Container: Tape & Reel (TR)		On Order
  • 15000:$0.3930
  • 7500:$0.4099
BGB 741L7ESD E6327
DISTI # BGB 741L7ESD E6327		Infineon Technologies AGHigh-Performance Broad Band LNA MMIC 6-Pin TSLP EP T/R (Alt: BGB 741L7ESD E6327)
RoHS: Compliant
Min Qty: 7500
Container: Tape and Reel		Asia - 0
  • 7500:$0.3634
  • 15000:$0.3485
  • 22500:$0.3438
  • 37500:$0.3304
  • 75000:$0.3261
  • 187500:$0.3180
  • 375000:$0.3102
BGB741L7ESDE6327XTSA1
DISTI # BGB741L7ESDE6327XTSA1		Infineon Technologies AGHigh-Performance Broad Band LNA MMIC 7-Pin TSLP EP T/R - Tape and Reel (Alt: BGB741L7ESDE6327XTSA1)
RoHS: Compliant
Min Qty: 7500
Container: Reel		Americas - 0
  • 7500:$0.4439
  • 15000:$0.4279
  • 30000:$0.4119
  • 45000:$0.3979
  • 75000:$0.3909
BGB741L7ESDE6327XTSA1
DISTI # 47Y7988		Infineon Technologies AGRF BIP TRANSISTORS,MSL:MSL 1 - Unlimited,SVHC:No SVHC (17-Dec-2014) , RoHS Compliant: Yes55
  • 1:$1.0200
  • 10:$0.8630
  • 25:$0.7960
  • 50:$0.7300
  • 100:$0.6630
  • 250:$0.6250
  • 500:$0.5860
  • 1000:$0.4630
BGB 741L7ESD E6327
DISTI # 726-BGB741L7ESDE63		Infineon Technologies AGRF Amplifier RF BIP TRANSISTORS
RoHS: Compliant		325
  • 1:$1.0200
  • 10:$0.8630
  • 100:$0.6630
  • 500:$0.5860
  • 1000:$0.4630
  • 2500:$0.4100
  • 7500:$0.3950
BGB741L7ESDE6327XTSA1
DISTI # 1107770P		Infineon Technologies AGLOW NOISE AMPLIFIER (LNA) MMIC TSLP6, RL30
  • 150:£0.3010
BGB741L7ESD-E6327Infineon Technologies AGRF/MICROWAVE AMPLIFIER, 1 FUNC, BIPOLAR156
  • 44:$1.1750
  • 12:$1.4100
  • 1:$2.3500
BGB 741L7ESD E6327Infineon Technologies AGINSTOCK31105
    BGB741L7ESDE6327XTSA1
    DISTI # 2443525    		Infineon Technologies AGRF BIP TRANSISTORS
    RoHS: Compliant    		55
    • 1:$1.6200
    • 10:$1.3700
    • 100:$1.0500
    • 500:$0.9280
    • 1000:$0.7330
    • 2500:$0.6490
    • 7500:$0.6250
    • 22500:$0.6060
    BGB741L7ESDE6327XTSA1
    DISTI # 2443525    		Infineon Technologies AGRF BIP TRANSISTORS
    RoHS: Compliant    		60
    • 1:£0.3270
    • 50:£0.3170
    • 100:£0.3100
    • 250:£0.3090
    • 500:£0.3080
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    Disponibilidad
    Valores:
    73
    En orden:
    2056
    Ingrese la cantidad:
    El precio actual de BGB 741L7ESD E6327 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,01 US$
    1,01 US$
    10
    0,86 US$
    8,63 US$
    100
    0,66 US$
    66,30 US$
    500
    0,59 US$
    293,00 US$
    1000
    0,46 US$
    463,00 US$
    2500
    0,41 US$
    1 025,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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