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IRG7PH35UD1MPBF

IRG7PH35UD1MPBF
Mfr. #:
IRG7PH35UD1MPBF
Fabricante:
Infineon Technologies
Descripción:
IGBT 1200V 50A 179W TO247AD
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRG7PH35UD1MPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
IGBTs - Single
Serie
-
embalaje
Tubo
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247AD
Potencia máxima
179W
Tiempo de recuperación inverso trr
-
Colector-corriente-Ic-Max
50A
Voltaje-Colector-Emisor-Ruptura-Máx.
1200V
Tipo IGBT
Zanja
Colector de corriente pulsado Icm
150A
Vce-en-Max-Vge-Ic
2.2V @ 15V, 20A
Energía de conmutación
620μJ (off)
Gate-Charge
130nC
Td-encendido-apagado-25 ° C
-/160ns
Condición de prueba
600V, 20A, 10 Ohm, 15V
Tags
IRG7PH35UD1, IRG7PH35UD, IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247AD Tube
***or
IGBT W/ULTRA-LOW VF DIODE FOR IN
*** Electronic Components
IGBT 1200V 50A 179W TO247AD
***el Electronic
CONN SWH RCPT STR 50 OHM SMD
***ark
IGBT TO-247, TUBE
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ark
1200V/25 Fast Igbt Only Fsii To-247 / Tube
***ical
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A Field Stop Trench
***ark
RAIL/1200V 25A FS2 Trench IGBT
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors IGBT & Power Bipolar
***i-Key
IGBT H-SERIES 1200V 25A TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Trench gate field-stop IGBT, TO-247 long leads, Tube
Parte # Mfg. Descripción Valores Precio
IRG7PH35UD1MPBF
DISTI # IRG7PH35UD1MPBF-ND		Infineon Technologies AGIGBT 1200V 50A 179W TO247AD
RoHS: Compliant
Min Qty: 100
Container: Tube		Limited Supply - Call
    IRG7PH35UD1MPBFInternational RectifierInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		2355
    • 1000:$2.9500
    • 500:$3.1000
    • 100:$3.2300
    • 25:$3.3700
    • 1:$3.6300
    IRG7PH35UD1MPBF
    DISTI # 942-IRG7PH35UD1MPBF    		Infineon Technologies AGIGBT Transistors 1200V UltraFast Discrete IGBT
    RoHS: Compliant    		0
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      		 Nuevo y original
      IRG7PH35UD1-EP,G7PH35UD1-E

      Mfr.#: IRG7PH35UD1-EP,G7PH35UD1-E

      OMO.#: OMO-IRG7PH35UD1-EP-G7PH35UD1-E-1190

      		 Nuevo y original
      IRG7PH35UD1-EP,IRG7PH35U

      Mfr.#: IRG7PH35UD1-EP,IRG7PH35U

      OMO.#: OMO-IRG7PH35UD1-EP-IRG7PH35U-1190

      		 Nuevo y original
      IRG7PH35UD1-EPBF

      Mfr.#: IRG7PH35UD1-EPBF

      OMO.#: OMO-IRG7PH35UD1-EPBF-1190

      		 Nuevo y original
      IRG7PH37K10DEPBF

      Mfr.#: IRG7PH37K10DEPBF

      OMO.#: OMO-IRG7PH37K10DEPBF-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de IRG7PH35UD1MPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      4,18 US$
      4,18 US$
      10
      3,98 US$
      39,76 US$
      100
      3,77 US$
      376,65 US$
      500
      3,56 US$
      1 778,65 US$
      1000
      3,35 US$
      3 348,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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