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APT10086BVRG

APT10086BVRG
Mfr. #:
APT10086BVRG
Fabricante:
Microchip / Microsemi
Descripción:
MOSFET FG, MOSFET, 1000V, TO-247, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT10086BVRG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Unidad de peso:
0.211644 oz
Tags
APT10086B, APT1008, APT100, APT10, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube
***rochip
MOSFET MOS5 1000 V 86 Ohm TO-247
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247
***r Electronics
Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N CH, 600V, 16A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***icroelectronics
N-Channel 600 V, 0.48 Ohm, 13 A, TO-247 Zener-Protected SuperMesh(TM) POWER MOSFET
***nell
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 600V, 13A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-247 package
***ark
N CHANNEL MOSFET, 600V, 10A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ure Electronics
N-Channel 600 V 16.8 A 230 mO 31 nC CoolMOS P6 Power Transistor - TO-247
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ark
MOSFET Transistor, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
***ure Electronics
Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS™ Power Mosfet - TO-247-3
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***nell
MOSFET, N-CH, 600V, 13.8A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Parte # Mfg. Descripción Valores Precio
APT10086BVRG
DISTI # 24838786		Microsemi CorporationTrans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247
RoHS: Compliant		7
  • 4:$15.0500
APT10086BVRG
DISTI # APT10086BVRG		Microchip Technology IncTrans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT10086BVRG)
RoHS: Compliant
Container: Tube		Americas - 0
    APT10086BVRG
    DISTI # 494-APT10086BVRG    		Microchip Technology IncMOSFET Power MOSFET - MOS5
    RoHS: Compliant    		25
    • 1:$26.1000
    • 5:$25.0800
    • 10:$24.1400
    • 25:$22.1800
    • 50:$21.3700
    • 100:$20.6200
    • 250:$18.9200
    APT10086BVRG
    DISTI # APT10086BVRG    		Microsemi CorporationPOWER MOSFET TRANSISTOR
    RoHS: Compliant    		7
    • 1:$12.0600
    • 50:$11.7600
    • 100:$11.6200
    Imagen Parte # Descripción
    APT10045LFLLG

    Mfr.#: APT10045LFLLG

    OMO.#: OMO-APT10045LFLLG

    		 Discrete Semiconductor Modules Power FREDFET - MOS7
    APT100GT120JU3

    Mfr.#: APT100GT120JU3

    OMO.#: OMO-APT100GT120JU3

    		 IGBT Modules DOR CC0007
    APT100GT60JR

    Mfr.#: APT100GT60JR

    OMO.#: OMO-APT100GT60JR

    		 IGBT Modules FG, IGBT, 600V, 100A, SOT-227
    APT1001RBVRG

    Mfr.#: APT1001RBVRG

    OMO.#: OMO-APT1001RBVRG

    		 MOSFET FG, MOSFET, 1000V, TO-247, RoHS
    APT1003RSFLLG

    Mfr.#: APT1003RSFLLG

    OMO.#: OMO-APT1003RSFLLG

    		 MOSFET FG, FREDFET, 1000V, D3, RoHS, TO-268
    APT10030L2VRS

    Mfr.#: APT10030L2VRS

    OMO.#: OMO-APT10030L2VRS-1190

    		 Nuevo y original
    APT10050B2VR

    Mfr.#: APT10050B2VR

    OMO.#: OMO-APT10050B2VR-1190

    		 Nuevo y original
    APT10050VFR

    Mfr.#: APT10050VFR

    OMO.#: OMO-APT10050VFR-1190

    		 Nuevo y original
    APT10078BFLLG

    Mfr.#: APT10078BFLLG

    OMO.#: OMO-APT10078BFLLG-1190

    		 Power MOS 7 FREDFET N-Channel 1000V 14A 3-Pin TO-247 - Rail/Tube (Alt: APT10078BFLLG)
    APT10078SLL

    Mfr.#: APT10078SLL

    OMO.#: OMO-APT10078SLL-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    25
    En orden:
    2008
    Ingrese la cantidad:
    El precio actual de APT10086BVRG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    26,10 US$
    26,10 US$
    5
    25,08 US$
    125,40 US$
    10
    24,14 US$
    241,40 US$
    25
    22,18 US$
    554,50 US$
    50
    21,37 US$
    1 068,50 US$
    100
    20,62 US$
    2 062,00 US$
    250
    18,92 US$
    4 730,00 US$
    500
    18,26 US$
    9 130,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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