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CMPA801B025F

CMPA801B025F
Mfr. #:
CMPA801B025F
Fabricante:
N/A
Descripción:
RF Amplifier 8.0-11.0GHz 25Watt GaN Flange
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CMPA801B025F Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
CMPA801B025F más información
Atributo del producto
Valor de atributo
Fabricante
Velocidad de lobo / Cree
categoria de producto
Amplificadores de RF
Tags
CMPA8, CMPA, CMP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC RF AMP 8.5GHZ-11GHZ 440208
***hardson RFPD
RF & MW POWER AMPLIFIER
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descripción Valores Precio
CMPA801B025F
DISTI # CMPA801B025F-ND		WolfspeedIC RF AMP 8.5GHZ-11GHZ 440208
RoHS: Compliant
Min Qty: 1
Container: Tray		124In Stock
  • 1:$414.1000
CMPA801B025F-TB
DISTI # CMPA801B025F-TB-ND		WolfspeedIC RF AMP 8.5GHZ-11GHZ MODULE
RoHS: Compliant
Min Qty: 2
Container: Bulk		Temporarily Out of Stock
  • 2:$715.0000
CMPA801B025F
DISTI # 941-CMPA801B025F		Cree, Inc.RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
RoHS: Compliant		12
  • 1:$414.1000
CMPA801B025F-TB
DISTI # 941-CMPA801B025F-TB		Cree, Inc.RF Amplifier Test Board without GaN MMIC
RoHS: Compliant		6
  • 1:$715.0000
CMPA801B025F
DISTI # CMPA801B025F		WolfspeedRF & MW POWER AMPLIFIER
RoHS: Compliant		0
  • 1:$414.1000
Imagen Parte # Descripción
CMPA801B025F-TB

Mfr.#: CMPA801B025F-TB

OMO.#: OMO-CMPA801B025F-TB

 RF Amplifier Test Board without GaN MMIC
CMPA801B025F

Mfr.#: CMPA801B025F

OMO.#: OMO-CMPA801B025F

 RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
CMPA801B025

Mfr.#: CMPA801B025

OMO.#: OMO-CMPA801B025-1190

 Nuevo y original
CMPA801B025D

Mfr.#: CMPA801B025D

OMO.#: OMO-CMPA801B025D-1190

 Nuevo y original
CMPA801B025P

Mfr.#: CMPA801B025P

OMO.#: OMO-CMPA801B025P-1152

 RF & MW POWER AMPLIFIER
CMPA801B025F

Mfr.#: CMPA801B025F

OMO.#: OMO-CMPA801B025F-WOLFSPEED

 RF Amplifier 8.0-11.0GHz 25Watt GaN Flange
CMPA801B025F-TB

Mfr.#: CMPA801B025F-TB

OMO.#: OMO-CMPA801B025F-TB-WOLFSPEED

 IC RF AMP 8.5GHZ-11GHZ MODULE
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de CMPA801B025F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
621,15 US$
621,15 US$
10
590,09 US$
5 900,92 US$
100
559,04 US$
55 903,50 US$
500
527,98 US$
263 988,75 US$
1000
496,92 US$
496 920,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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