475-102N21A-00

475-102N21A-00
Mfr. #:
475-102N21A-00
Fabricante:
Littelfuse
Descripción:
RF MOSFET Transistors DE-475 21A 1000V N Channel MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
475-102N21A-00 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
475-102N21A-00 Datasheet475-102N21A-00 Datasheet (P4-P5)
ECAD Model:
Más información:
475-102N21A-00 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
24 A
Vds - Voltaje de ruptura de drenaje-fuente:
1000 V
Rds On - Resistencia de la fuente de drenaje:
450 mOhms
Potencia de salida:
1.8 kW
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SMD-6
Embalaje:
Tubo
Frecuencia de operación:
30 MHz
Serie:
Delaware
Escribe:
RF Power MOSFET
Marca:
IXYS
Transconductancia directa - Mín .:
12 S
Número de canales:
1 Channel
Tipo de producto:
Transistores RF MOSFET
Qg - Carga de puerta:
155 nC
Cantidad de paquete de fábrica:
20
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
20 V
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Parte # Alias:
DE475-102N21A VREF
Tags
475-10, 475-1, 475
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Power MOSFETs
IXYS Power MOSFETs are designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. These Power MOSFETs are available in a wide variety of standard industrial package options for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
Parte # Mfg. Descripción Valores Precio
475-102N21A-00
DISTI # V36:1790_14391253
IXYS CorporationNOT RECOMMENDED FOR REFLOW0
    475-102N21A-00
    DISTI # 475-102N21A-00-ND
    IXYS CorporationRF MOSFET N-CHANNEL DE475
    RoHS: Not compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 100:$26.0384
    • 40:$28.0160
    • 20:$30.4880
    • 1:$32.9600
    475-102N21A-00
    DISTI # 747-475-102N21A-00
    IXYS CorporationRF MOSFET Transistors DE-475 21A 1000V N Channel MOSFET
    RoHS: Compliant
    0
    • 1:$37.9000
    • 5:$37.0500
    • 10:$35.0600
    • 25:$32.9600
    • 50:$30.4900
    • 100:$29.9400
    • 250:$25.5400
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    INDUCTOR, 22UH, 1.7A, 20%, SHIELDED
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de 475-102N21A-00 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    37,90 US$
    37,90 US$
    5
    37,05 US$
    185,25 US$
    10
    35,06 US$
    350,60 US$
    25
    32,96 US$
    824,00 US$
    50
    30,49 US$
    1 524,50 US$
    100
    29,94 US$
    2 994,00 US$
    250
    25,54 US$
    6 385,00 US$
    500
    22,25 US$
    11 125,00 US$
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