| Mfr. #: | ULN2003AIN |
|---|---|
| Fabricante: | Texas Instruments |
| Descripción: | Darlington Transistors HiVltg Hi-Current Darl Trans Array |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | ULN2003AIN Ficha de datos |
Product belongs to the ULN2003AI series. Tube Alternate Packaging is the packaging method for this product Weight of 0.033570 oz Through Hole Mounting-Style 16-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 16-PDIP Configuration Array 7 Transistor type: 7 NPN Darlington Maximum current collector Ic is 500mA . Maximum collector-emitter breakdown voltage of 50V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.6V @ 500μA, 350mA Maximum operating temperature of + 105 C Minimum operating temperature: - 40 C Rated VCEO up to 50 V The transistor polarity is NPN. Max DC collector current: 0.5 A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ULN2003AIN Specifications
A: What is the Series of the product?
Q: The Series of the product is ULN2003AI.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube Alternate Packaging.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.033570 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 16-DIP (0.300", 7.62mm).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 16-PDIP
A: At what frequency does the Configuration?
Q: The product Configuration is Array 7.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 7 NPN Darlington.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 500mA.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 50V.
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed -
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.6V @ 500μA, 350mA.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 105 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 40 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 50 V
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?
Q: Yes, the product's Maximum-DC-Collector-Current is indeed 0.5 A