STW36NM60N

Mfr. #: STW36NM60N
Fabricante: STMicroelectronics
Descripción: RF Bipolar Transistors MOSFET N-Ch 600V 0.092 Ohm 29A MDmesh II
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STW36NM60N Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW36NM60N Overview

Product belongs to the STW36NM60N series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 210 W Maximum operating temperature of + 150 C The ID of continuous drain current is 29 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 105 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STW36NM60N Image

STW36NM60N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW36NM60N Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series STW36NM60N
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 210 W
  • Maximum-Operating-Temperature + 150 C
  • Id-Continuous-Drain-Current 29 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 105 mOhms
  • Transistor-Polarity N-Channel

STW36NM60N

STW36NM60N Specifications

STW36NM60N FAQ
  • A: At what frequency does the Series?

    Q: The product Series is STW36NM60N.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 1.340411 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 210 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 29 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 105 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

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