STW27NM60ND

Mfr. #: STW27NM60ND
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 600V 21A TO-247
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STW27NM60ND Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW27NM60ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. The ID of continuous drain current is 21 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 130 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STW27NM60ND Image

STW27NM60ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW27NM60ND Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Id-Continuous-Drain-Current 21 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 130 mOhms
  • Transistor-Polarity N-Channel

STW27NM60ND

STW27NM60ND Specifications

STW27NM60ND FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel MDmesh.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 1.340411 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 21 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 130 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

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1
8,02 US$
8,02 US$
10
7,62 US$
76,24 US$
100
7,22 US$
722,25 US$
500
6,82 US$
3 410,65 US$
1000
6,42 US$
6 420,00 US$
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