STW21N150K5

STW21N150K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 1500V (1.5kV) This product has an 3145pF @ 100V value of 300pF @ 25V. This product's Standard. 14A (Tc) continuous drain-ID current at 25°C; This product has an 900 mOhm @ 7A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 446 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 26 ns of 16 ns. This product has a 14 ns of 16 ns. This product's +/- 30 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1.5 kV. This product has a 3 V to 5 V Vgs-th gate-source threshold voltage for efficient power management. The 900 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 134 ns This product has a 34 ns. Qg-Gate-Charge is 89 nC. This product operates in Enhancement channel mode for optimal performance.

STW21N150K5 Image

STW21N150K5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series MDmesh K5
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 446W
• Drain-to-Source-Voltage-Vdss 1500V (1.5kV)
• Input-Capacitance-Ciss-Vds 3145pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 14A (Tc)
• Rds-On-Max-Id-Vgs 900 mOhm @ 7A, 10V
• Vgs-th-Max-Id 5V @ 100μA
• Gate-Charge-Qg-Vgs 89nC @ 10V
• Pd-Power-Dissipation 446 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 26 ns
• Rise-Time 14 ns
• Vgs-Gate-Source-Voltage +/- 30 V
• Id-Continuous-Drain-Current 14 A
• Vds-Drain-Source-Breakdown-Voltage 1.5 kV
• Vgs-th-Gate-Source-Threshold-Voltage 3 V to 5 V
• Rds-On-Drain-Source-Resistance 900 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 134 ns
• Typical-Turn-On-Delay-Time 34 ns
• Qg-Gate-Charge 89 nC
• Channel-Mode Enhancement

STW21N150K5 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh K5.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-247-3.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 1500V (1.5kV).

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 3145pF @ 100V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 14A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 900 mOhm @ 7A, 10V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 446 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 26 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 14 ns

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 30 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 14 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1.5 kV.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V to 5 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 900 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 134 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 34 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 89 nC.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.