STW11NK100Z

STW11NK100Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1000V (1kV) This product has an 3500pF @ 25V value of 300pF @ 25V. This product's Standard. 8.3A (Tc) continuous drain-ID current at 25°C; This product has an 1.38 Ohm @ 4.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 230 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 55 ns of 16 ns. This product has a 18 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 8.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1000 V. The 1.38 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 98 ns This product has a 27 ns. Qg-Gate-Charge is 113 nC. This product operates in Enhancement channel mode for optimal performance.

STW11NK100Z Image

STW11NK100Z Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series SuperMESH
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 230W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1000V (1kV)
• Input-Capacitance-Ciss-Vds 3500pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 8.3A (Tc)
• Rds-On-Max-Id-Vgs 1.38 Ohm @ 4.15A, 10V
• Vgs-th-Max-Id 4.5V @ 100μA
• Gate-Charge-Qg-Vgs 162nC @ 10V
• Pd-Power-Dissipation 230 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 55 ns
• Rise-Time 18 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 8.3 A
• Vds-Drain-Source-Breakdown-Voltage 1000 V
• Rds-On-Drain-Source-Resistance 1.38 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 98 ns
• Typical-Turn-On-Delay-Time 27 ns
• Qg-Gate-Charge 113 nC
• Channel-Mode Enhancement

STW11NK100Z FAQ

• A: At what frequency does the Series?

  Q: The product Series is SuperMESH.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-247-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-247-3

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 1000V (1kV).

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 3500pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 8.3A (Tc).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 1.38 Ohm @ 4.15A, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 230 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 55 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 18 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 8.3 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 1000 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 1.38 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 98 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 27 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 113 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement