| Mfr. #: | STU6NF10 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | RF Bipolar Transistors MOSFET N-Ch, 100V-0.22ohms 6A |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STU6NF10 Ficha de datos |
RoHS compliant with Details Input bias current of Through Hole Package type is IPAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 100 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 6 A; The Rds On - Drain-Source Resistance of the product is 250 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. Maximum Operating Temperature: + 175 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 3 ns - 65 C minimum operating temperature The power dissipation is 30 W. 10 ns Rise Time Product belongs to the N-channel STripFET series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 20 ns; The 6 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STU6NF10 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is IPAK-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 100 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 6 A
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 250 mOhms.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is 20 V.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 175 C.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 3 ns
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 65 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 30 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 10 ns
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel STripFET
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 20 ns
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 6 ns
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.139332 oz.