| Mfr. #: | STS8C5H30L |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N/P-CH 30V 8A/5.4A 8SOIC |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STS8C5H30L Ficha de datos |
Product belongs to the STripFET III series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.002998 oz SMD/SMT Mounting-Style 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SO Configuration Dual Dual Drain This product uses an N and P-Channel FET-Type transistor. Transistor type: 1 N-Channel 1 P-Channel 30V This product has an 857pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 8A, 5.4A continuous drain-ID current at 25°C; This product has an 22 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns 35 ns of 16 ns. This product has a 14.5 ns 35 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 22 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel P-Channel. 'Typical-Turn-Off-Delay-Time' of 23 ns 125 ns This product has a 12 ns 25 ns. Qg-Gate-Charge is 7 nC. This product features a 8.5 S 10 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STS8C5H30L Specifications
A: At what frequency does the Series?
Q: The product Series is STripFET III.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.002998 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed 8-SOIC (0.154", 3.90mm Width)
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is 150°C (TJ).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 2 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-SO
A: What is the Configuration of the product?
Q: The Configuration of the product is Dual Dual Drain.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed N and P-Channel
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel 1 P-Channel
A: At what frequency does the Drain-to-Source-Voltage-Vdss?
Q: The product Drain-to-Source-Voltage-Vdss is 30V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 857pF @ 25V
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Logic Level Gate.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 8A, 5.4A
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 22 mOhm @ 4A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 2 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 8 ns 35 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 14.5 ns 35 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 16 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 8 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.5 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 22 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel P-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 23 ns 125 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 12 ns 25 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 7 nC.
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 8.5 S 10 S
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement