| Mfr. #: | STP8NK80Z |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N-CH 800V 6.2A TO-220 |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STP8NK80Z Ficha de datos |
Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 140 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 28 ns of 16 ns. This product has a 30 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6.2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 1.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 48 ns This product has a 17 ns. Qg-Gate-Charge is 46 nC. This product features a 5.2 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP8NK80Z Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel MDmesh.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.050717 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 140 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 28 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 30 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 6.2 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 800 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 1.5 Ohms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 48 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 17 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 46 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 5.2 S.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement