STP80PF55

Mfr. #: STP80PF55
Fabricante: STMicroelectronics
Descripción: MOSFET P-CH 55V 80A TO-220
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STP80PF55 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP80PF55 Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 55V This product has an 5500pF @ 25V value of 300pF @ 25V. This product's Standard. 80A (Tc) continuous drain-ID current at 25°C; This product has an 18 mOhm @ 40A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 80 ns of 16 ns. This product has a 190 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 80 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 55 V. The 18 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 165 ns This product has a 35 ns. This product features a 32 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP80PF55 Image

STP80PF55

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP80PF55 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series STripFET II
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • FET-Type MOSFET P-Channel, Metal Oxide
  • Power-Max 300W
  • Transistor-Type 1 P-Channel
  • Drain-to-Source-Voltage-Vdss 55V
  • Input-Capacitance-Ciss-Vds 5500pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 80A (Tc)
  • Rds-On-Max-Id-Vgs 18 mOhm @ 40A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 258nC @ 10V
  • Pd-Power-Dissipation 300 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 80 ns
  • Rise-Time 190 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 80 A
  • Vds-Drain-Source-Breakdown-Voltage - 55 V
  • Rds-On-Drain-Source-Resistance 18 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 165 ns
  • Typical-Turn-On-Delay-Time 35 ns
  • Forward-Transconductance-Min 32 S
  • Channel-Mode Enhancement

STP80PF55

STP80PF55 Specifications

STP80PF55 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STripFET II

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET P-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 P-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 55V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 5500pF @ 25V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 80A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 18 mOhm @ 40A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 300 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 80 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 190 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 16 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 80 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 55 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 18 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 165 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 35 ns.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 32 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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Cantidad
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Ext. Precio
1
1,99 US$
1,99 US$
10
1,89 US$
18,92 US$
100
1,79 US$
179,28 US$
500
1,69 US$
846,60 US$
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1,59 US$
1 593,60 US$
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