| Mfr. #: | STP43N60DM2 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N-CH 600V 34A |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STP43N60DM2 Ficha de datos |


Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6 ns of 16 ns. This product has a 27 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 34 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 93 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 85 ns This product has a 29 ns. Qg-Gate-Charge is 56 nC. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP43N60DM2 Specifications
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.011640 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 250 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 6 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 27 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 25 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 34 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 93 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 85 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 29 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 56 nC.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.