STP36NF06L

STP36NF06L Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 60V This product has an 660pF @ 25V value of 300pF @ 25V. This product's Standard. 30A (Tc) continuous drain-ID current at 25°C; This product has an 40 mOhm @ 15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 70 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 13 ns of 16 ns. This product has a 80 ns of 16 ns. This product's 18 V. The ID of continuous drain current is 30 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 32 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 19 ns This product has a 10 ns. This product features a 15 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP36NF06L Image

STP36NF06L Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series STripFET II
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 175°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 70W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 660pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 30A (Tc)
• Rds-On-Max-Id-Vgs 40 mOhm @ 15A, 10V
• Vgs-th-Max-Id 2.5V @ 250μA
• Gate-Charge-Qg-Vgs 17nC @ 5V
• Pd-Power-Dissipation 70 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 13 ns
• Rise-Time 80 ns
• Vgs-Gate-Source-Voltage 18 V
• Id-Continuous-Drain-Current 30 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Rds-On-Drain-Source-Resistance 32 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 19 ns
• Typical-Turn-On-Delay-Time 10 ns
• Forward-Transconductance-Min 15 S
• Channel-Mode Enhancement

STP36NF06L FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed STripFET II

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 660pF @ 25V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 30A (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 40 mOhm @ 15A, 10V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 70 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 13 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 80 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 18 V

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 30 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 60 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 32 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 19 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 10 ns.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 15 S.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.