STP310N10F7

Mfr. #: STP310N10F7
Fabricante: STMicroelectronics
Descripción: MOSFET N CH 100V 180A TO-220
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STP310N10F7 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP310N10F7 Overview

Product belongs to the DeepGATE, STripFET VII series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Supplier device package: TO-220 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 100V This product has an 12800pF @ 25V value of 300pF @ 25V. This product's Standard. 180A (Tc) continuous drain-ID current at 25°C; This product has an 2.7 mOhm @ 60A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 315 W This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 2.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 180 nC.

STP310N10F7 Image

STP310N10F7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP310N10F7 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series DeepGATE, STripFET VII
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 315W
  • Drain-to-Source-Voltage-Vdss 100V
  • Input-Capacitance-Ciss-Vds 12800pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 180A (Tc)
  • Rds-On-Max-Id-Vgs 2.7 mOhm @ 60A, 10V
  • Vgs-th-Max-Id 3.8V @ 250μA
  • Gate-Charge-Qg-Vgs 180nC @ 10V
  • Pd-Power-Dissipation 315 W
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 180 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Rds-On-Drain-Source-Resistance 2.7 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 180 nC

STP310N10F7

STP310N10F7 Specifications

STP310N10F7 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is DeepGATE, STripFET VII.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 100V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 12800pF @ 25V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 180A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 2.7 mOhm @ 60A, 10V

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 315 W.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 180 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.7 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 180 nC.

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