STP180N10F3

Mfr. #: STP180N10F3
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 100V 120A TO220
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STP180N10F3 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP180N10F3 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 315 W This product has a 6.9 ns of 16 ns. This product has a 97.1 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 4.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 114.6 nC.

STP180N10F3 Image

STP180N10F3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP180N10F3 Specifications
  • Manufacturer ST/
  • Product Category FETs - Single
  • Series N-channel STripFET
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 315 W
  • Fall-Time 6.9 ns
  • Rise-Time 97.1 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 120 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 4.5 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 114.6 nC

STP180N10F3

STP180N10F3 Specifications

STP180N10F3 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel STripFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 315 W.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 6.9 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 97.1 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 120 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 4.5 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 114.6 nC

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