| Mfr. #: | STP16N65M2 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | IGBT Transistors MOSFET POWER MOSFET |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STP16N65M2 Ficha de datos |
Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 11.3 ns of 16 ns. This product has a 8.2 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 360 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 36 ns This product has a 11.3 ns. Qg-Gate-Charge is 19.5 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP16N65M2 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MDmesh M2
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.011640 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 110 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 11.3 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 8.2 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 11 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 360 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 36 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 11.3 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 19.5 nC
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.