| Mfr. #: | STP110N55F6 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N CH 55V 110A TO-220 |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STP110N55F6 Ficha de datos |
Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Power-off control: 150 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C The ID of continuous drain current is 110 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 55 V. The 5.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 120 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP110N55F6 Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel STripFET.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.011640 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 150 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 175 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 110 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 55 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5.2 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 120 nC.