STN3N45K3

Mfr. #: STN3N45K3
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 450V 0.6A SOT-223
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STN3N45K3 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN3N45K3 Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.008826 oz SMD/SMT Mounting-Style SOT-223-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 2 W Maximum operating temperature of + 150 C This product's 3 V. The ID of continuous drain current is 600 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 450 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 3.8 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 6 nC.

STN3N45K3 Image

STN3N45K3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN3N45K3 Specifications
  • Manufacturer STM
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel MDmesh
  • Packaging Reel
  • Unit-Weight 0.008826 oz
  • Mounting-Style SMD/SMT
  • Package-Case SOT-223-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 2 W
  • Maximum-Operating-Temperature + 150 C
  • Vgs-Gate-Source-Voltage 3 V
  • Id-Continuous-Drain-Current 600 mA
  • Vds-Drain-Source-Breakdown-Voltage 450 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
  • Rds-On-Drain-Source-Resistance 3.8 Ohms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 6 nC

STN3N45K3

STN3N45K3 Specifications

STN3N45K3 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel MDmesh

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.008826 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is SOT-223-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 2 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 3 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 600 mA.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 450 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4.5 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3.8 Ohms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 6 nC.

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1
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0,27 US$
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24,56 US$
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