STL160NS3LLH7

Mfr. #: STL160NS3LLH7
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 30V 160A POWERFLAT56
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STL160NS3LLH7 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL160NS3LLH7 Overview

Product belongs to the N-channel STripFET series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 4.8 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 19.5 ns of 16 ns. This product has a 21.3 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 36 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 2.3 V Vgs-th gate-source threshold voltage for efficient power management. The 2.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 50.7 ns This product has a 12.4 ns. Qg-Gate-Charge is 20 nC. This product operates in Enhancement channel mode for optimal performance.

STL160NS3LLH7 Image

STL160NS3LLH7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL160NS3LLH7 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel STripFET
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 4.8 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 19.5 ns
  • Rise-Time 21.3 ns
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 36 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.3 V
  • Rds-On-Drain-Source-Resistance 2.1 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 50.7 ns
  • Typical-Turn-On-Delay-Time 12.4 ns
  • Qg-Gate-Charge 20 nC
  • Channel-Mode Enhancement

STL160NS3LLH7

STL160NS3LLH7 Specifications

STL160NS3LLH7 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel STripFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PowerFlat-8

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 4.8 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 19.5 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 21.3 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is +/- 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 36 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.3 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.1 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 50.7 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 12.4 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 20 nC

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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