| Mfr. #: | STI57N65M5 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N-CH 650V 42A I2PAK-3 |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STI57N65M5 Ficha de datos |
Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style I2PAK-3 Si is the technology used. Power-off control: 250 W The ID of continuous drain current is 26.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 63 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STI57N65M5 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh M5.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.050717 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is I2PAK-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 250 W.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 26.5 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 63 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.