STH315N10F7-2

Mfr. #: STH315N10F7-2
Fabricante: STMicroelectronics
Descripción: Darlington Transistors MOSFET POWER MOSFET
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STH315N10F7-2 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STH315N10F7-2 Overview

Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 315 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 40 ns of 16 ns. This product has a 108 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 3.5 V Vgs-th gate-source threshold voltage for efficient power management. The 2.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 148 ns This product has a 62 ns. Qg-Gate-Charge is 180 nC.

STH315N10F7-2 Image

STH315N10F7-2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STH315N10F7-2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel STripFET
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 315 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 40 ns
  • Rise-Time 108 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 180 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3.5 V
  • Rds-On-Drain-Source-Resistance 2.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 148 ns
  • Typical-Turn-On-Delay-Time 62 ns
  • Qg-Gate-Charge 180 nC

STH315N10F7-2

STH315N10F7-2 Specifications

STH315N10F7-2 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel STripFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 315 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 40 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 108 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 180 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3.5 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.3 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 148 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 62 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 180 nC.

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