| Mfr. #: | STH170N8F7-2 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N-CH 80V 120A |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STH170N8F7-2 Ficha de datos |
Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Power-off control: 250 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 37 ns of 16 ns. This product has a 53 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V to 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 3.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 79 ns This product has a 38 ns. Qg-Gate-Charge is 120 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STH170N8F7-2 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel STripFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.139332 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-252-3
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 250 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 175 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 37 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 53 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 120 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.5 V to 4.5 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3.7 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 79 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 38 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 120 nC.
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.