STGWT80H65DFB

Mfr. #: STGWT80H65DFB
Fabricante: STMicroelectronics
Descripción: IGBT 650V 120A 469W TO3P-3L
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STGWT80H65DFB Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWT80H65DFB Overview

Product belongs to the 600-650V IGBTs series. Tube is the packaging method for this product Weight of 0.238311 oz Through Hole Mounting-Style TO-3P-3, SC-65-3 The Standard for this product is CMOS/TTL. Through Hole mounting type Supplier device package: TO-3P Configuration Single Maximum current collector Ic is 120A . Maximum collector-emitter breakdown voltage of 650V The Current-Collector-Pulsed-Icm is rated at 240A. The Vce-on-Max-Vge-Ic is rated at 2V @ 15V, 80A. 84ns/280ns Td-on-off at 25°C; Operating temperature: 400V, 80A, 10 Ohm, 15V Power-off control: 469 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C Rated VCEO up to 650 V Saturation voltage between collector and emitter is 1.6 V 120 A Continuous Collector Current at 25°C Maximum-Gate-Emitter-Voltage: +/- 20 V Maximal 80 A Collector Current of Continuity;

STGWT80H65DFB Image

STGWT80H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWT80H65DFB Specifications
  • Manufacturer STMicroelectronics
  • Product Category IGBTs - Single
  • Series 600-650V IGBTs
  • Packaging Tube
  • Unit-Weight 0.238311 oz
  • Mounting-Style Through Hole
  • Package-Case TO-3P-3, SC-65-3
  • Input-Type Standard
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-3P
  • Configuration Single
  • Power-Max 469W
  • Reverse-Recovery-Time-trr 85ns
  • Current-Collector-Ic-Max 120A
  • Voltage-Collector-Emitter-Breakdown-Max 650V
  • IGBT-Type Trench Field Stop
  • Current-Collector-Pulsed-Icm 240A
  • Vce-on-Max-Vge-Ic 2V @ 15V, 80A
  • Switching-Energy 2.1mJ (on), 1.5mJ (off)
  • Gate-Charge 414nC
  • Td-on-off-25°C 84ns/280ns
  • Test-Condition 400V, 80A, 10 Ohm, 15V
  • Pd-Power-Dissipation 469 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 650 V
  • Collector-Emitter-Saturation-Voltage 1.6 V
  • Continuous-Collector-Current-at-25-C 120 A
  • Gate-Emitter-Leakage-Current 250 nA
  • Maximum-Gate-Emitter-Voltage +/- 20 V
  • Continuous-Collector-Current-Ic-Max 80 A

STGWT80H65DFB

STGWT80H65DFB Specifications

STGWT80H65DFB FAQ
  • A: At what frequency does the Series?

    Q: The product Series is 600-650V IGBTs.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.238311 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-3P-3, SC-65-3.

  • A: What is the Input-Type of the product?

    Q: The Input-Type of the product is Standard.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-3P.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 120A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 650V.

  • A: Is the cutoff frequency of the product Current-Collector-Pulsed-Icm?

    Q: Yes, the product's Current-Collector-Pulsed-Icm is indeed 240A

  • A: Is the cutoff frequency of the product Vce-on-Max-Vge-Ic?

    Q: Yes, the product's Vce-on-Max-Vge-Ic is indeed 2V @ 15V, 80A

  • A: At what frequency does the Td-on-off-25°C?

    Q: The product Td-on-off-25°C is 84ns/280ns.

  • A: At what frequency does the Test-Condition?

    Q: The product Test-Condition is 400V, 80A, 10 Ohm, 15V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 469 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 650 V

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 1.6 V.

  • A: At what frequency does the Continuous-Collector-Current-at-25-C?

    Q: The product Continuous-Collector-Current-at-25-C is 120 A.

  • A: Is the cutoff frequency of the product Maximum-Gate-Emitter-Voltage?

    Q: Yes, the product's Maximum-Gate-Emitter-Voltage is indeed +/- 20 V

  • A: Is the cutoff frequency of the product Continuous-Collector-Current-Ic-Max?

    Q: Yes, the product's Continuous-Collector-Current-Ic-Max is indeed 80 A

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