STFW1N105K3

Mfr. #: STFW1N105K3
Fabricante: STMicroelectronics
Descripción: RF Bipolar Transistors MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM)
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STFW1N105K3 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STFW1N105K3 Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.245577 oz Through Hole Mounting-Style Trade name: SuperMESH. TO-3P-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 20 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 50 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 1.4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1050 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 8 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 27 ns This product has a 6 ns. Qg-Gate-Charge is 13 nC. This product operates in Enhancement channel mode for optimal performance.

STFW1N105K3 Image

STFW1N105K3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STFW1N105K3 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 0.245577 oz
  • Mounting-Style Through Hole
  • Tradename SuperMESH
  • Package-Case TO-3P-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 20 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 50 ns
  • Rise-Time 7 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 1.4 A
  • Vds-Drain-Source-Breakdown-Voltage 1050 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 8 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 27 ns
  • Typical-Turn-On-Delay-Time 6 ns
  • Qg-Gate-Charge 13 nC
  • Channel-Mode Enhancement

STFW1N105K3

STFW1N105K3 Specifications

STFW1N105K3 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel MDmesh.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.245577 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is SuperMESH.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-3P-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 20 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 50 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 7 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 1.4 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 1050 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8 Ohms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 27 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 6 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 13 nC

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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