| Mfr. #: | STFI9N80K5 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N-CH 800V 7A I2PAKFP |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STFI9N80K5 Ficha de datos |
RoHS compliant with Details Input bias current of Through Hole Package type is I2PAKFP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 7 A; The Rds On - Drain-Source Resistance of the product is 900 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 12 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 13.6 ns - 55 C minimum operating temperature The power dissipation is 25 W. 5.7 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 65.3 ns; The 11 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STFI9N80K5 Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Package / Case?
Q: The product Package / Case is I2PAKFP-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 800 V
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 7 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 900 mOhms
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 30 V
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 3 V.
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 12 nC
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 13.6 ns
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 25 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 5.7 ns
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 65.3 ns.
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 11 ns