| Mfr. #: | STF35N60DM2 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N-CH 600V 28A |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STF35N60DM2 Ficha de datos |


RoHS compliant with Details Input bias current of Through Hole Package type is TO-220FP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 28 A; The Rds On - Drain-Source Resistance of the product is 110 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 54 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 10.7 ns - 55 C minimum operating temperature The power dissipation is 40 W. 17 ns Rise Time Typical Turn-Off Delay Time of 68 ns; The 21.2 ns typical turn-on delay time The Unit Weight is 0.081130 oz.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF35N60DM2 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-220FP-3
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 600 V
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 28 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 110 mOhms
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is +/- 25 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 3 V.
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 54 nC
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: What is the Configuration of the product?
Q: The Configuration of the product is 1 N-Channel.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 10.7 ns.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 40 W
A: At what frequency does the Rise Time?
Q: The product Rise Time is 17 ns.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 68 ns.
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 21.2 ns
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.081130 oz.