STF26N60M2

Mfr. #: STF26N60M2
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 600V 20A TO-220FP
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STF26N60M2 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF26N60M2 Overview

RoHS compliant with Details Input bias current of Through Hole Package type is TO-220FP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 20 A; The Rds On - Drain-Source Resistance of the product is 165 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 2 V Gate-Source Threshold Voltage of Vgs th; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel - 55 C minimum operating temperature The power dissipation is 30 W. 1 N-Channel Transistor Type

STF26N60M2 Image

STF26N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF26N60M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • RoHS Details
  • Mounting Style Through Hole
  • Package / Case TO-220FP-3
  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel
  • Vds - Drain-Source Breakdown Voltage 600 V
  • Id - Continuous Drain Current 20 A
  • Rds On - Drain-Source Resistance 165 mOhms
  • Vgs - Gate-Source Voltage +/- 25 V
  • Vgs th - Gate-Source Threshold Voltage 2 V
  • Maximum Operating Temperature + 150 C
  • Technology Si
  • Channel Mode Enhancement
  • Brand STMicroelectronics
  • Configuration 1 N-Channel
  • Minimum Operating Temperature - 55 C
  • Pd - Power Dissipation 30 W
  • Transistor Type 1 N-Channel

STF26N60M2

STF26N60M2 Specifications

STF26N60M2 FAQ
  • A: At what frequency does the RoHS?

    Q: The product RoHS is Details.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed TO-220FP-3

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 1 Channel.

  • A: What is the Transistor Polarity of the product?

    Q: The Transistor Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 600 V

  • A: At what frequency does the Id - Continuous Drain Current?

    Q: The product Id - Continuous Drain Current is 20 A.

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 165 mOhms.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is +/- 25 V.

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2 V

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 30 W

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 1 N-Channel.

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