STF10P6F6

Mfr. #: STF10P6F6
Fabricante: STMicroelectronics
Descripción: IGBT Transistors MOSFET P-CH 60V 0.13Ohm 10A STripFET VI
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STF10P6F6 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF10P6F6 Overview

Product belongs to the P-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 P-Channel Power-off control: 20 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 3.7 ns of 16 ns. This product has a 5.3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 10 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 60 V. This product has a 2 V to 4 V Vgs-th gate-source threshold voltage for efficient power management. The 160 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 14 ns This product has a 64 ns. Qg-Gate-Charge is 6.4 nC.

STF10P6F6 Image

STF10P6F6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF10P6F6 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series P-channel STripFET
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 20 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.7 ns
  • Rise-Time 5.3 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 10 A
  • Vds-Drain-Source-Breakdown-Voltage - 60 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2 V to 4 V
  • Rds-On-Drain-Source-Resistance 160 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 14 ns
  • Typical-Turn-On-Delay-Time 64 ns
  • Qg-Gate-Charge 6.4 nC

STF10P6F6

STF10P6F6 Specifications

STF10P6F6 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed P-channel STripFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 P-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 20 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 3.7 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 5.3 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 10 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is - 60 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2 V to 4 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 160 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is P-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 14 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 64 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 6.4 nC.

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