| Mfr. #: | STF10N60M2 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N-CH 600V TO-220FP |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STF10N60M2 Ficha de datos |
Product belongs to the MDmesh II Plus series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Full Pack Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220FP Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 400pF @ 100V value of 300pF @ 25V. This product's Standard. 7.5A (Tc) continuous drain-ID current at 25°C; This product has an 600 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 13.2 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 7.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 560 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 32.5 ns This product has a 8.8 ns. Qg-Gate-Charge is 13.5 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF10N60M2 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh II Plus.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.011640 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3 Full Pack.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-220FP.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 600V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 400pF @ 100V
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 7.5A (Tc)
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 600 mOhm @ 4A, 10V
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 25 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 13.2 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 8 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 7.5 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 560 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 32.5 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 8.8 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 13.5 nC.