STE88N65M5

Mfr. #: STE88N65M5
Fabricante: STMicroelectronics
Descripción: IGBT Transistors MOSFET POWER MOSFET
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STE88N65M5 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STE88N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 1 oz SMD/SMT Mounting-Style ISOTOP-4 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 494 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 29 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 88 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 204 nC. This product operates in Enhancement channel mode for optimal performance.

STE88N65M5 Image

STE88N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STE88N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Unit-Weight 1 oz
  • Mounting-Style SMD/SMT
  • Package-Case ISOTOP-4
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Pd-Power-Dissipation 494 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 29 ns
  • Rise-Time 16 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 88 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 24 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 204 nC
  • Channel-Mode Enhancement

STE88N65M5

STE88N65M5 Specifications

STE88N65M5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh M5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed ISOTOP-4

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 494 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 29 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 16 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 88 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 24 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 204 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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Cantidad
Precio unitario
Ext. Precio
1
31,08 US$
31,08 US$
10
29,53 US$
295,26 US$
100
27,97 US$
2 797,20 US$
500
26,42 US$
13 209,00 US$
1000
24,86 US$
24 864,00 US$
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