STD9NM50N

Mfr. #: STD9NM50N
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 500V 7.5A DPAK
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STD9NM50N Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD9NM50N Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 70 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 19 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 7.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 560 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 11 ns. Qg-Gate-Charge is 14 nC. This product operates in Enhancement channel mode for optimal performance.

STD9NM50N Image

STD9NM50N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD9NM50N Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 70 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 19 ns
  • Rise-Time 16 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 7.5 A
  • Vds-Drain-Source-Breakdown-Voltage 500 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 560 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 45 ns
  • Typical-Turn-On-Delay-Time 11 ns
  • Qg-Gate-Charge 14 nC
  • Channel-Mode Enhancement

STD9NM50N

STD9NM50N Specifications

STD9NM50N FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel MDmesh.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.139332 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 70 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 19 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 16 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 7.5 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 500 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 560 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 45 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 11 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 14 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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